Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Preprint |
| Published: |
2026
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2605.28743 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866913168419192832 |
|---|---|
| author | Fadla, Mohamed Abdelilah Grüning, Myrta Stella, Lorenzo |
| author_facet | Fadla, Mohamed Abdelilah Grüning, Myrta Stella, Lorenzo |
| contents | Split Ga vacancies are the dominant native acceptor in $β$-$Ga_2O_3$; however, their role in $α$ and $κ$ phases has been largely overlooked or assumed to be unfavorable. A detailed understanding of these defects is critical for tailoring the electrical conductivity and optical properties and optimising $Ga_2O_3$-based devices. In this work, we used machine learning interatomic potentials (MLIPs) to accelerate the discovery of non-local defect reconstructions, followed by HSE06 hybrid DFT to accurately quantify defect properties of single vacancy $V_{\text{Ga}}$, split vacancy $V_{\text{Ga}}^{\text{i}}$ and substitutional donors ($\mathrm{Hf_{Ga}}$ and $\mathrm{Si_{Ga}}$) across a wide range of experimentally relevant conditions for the oxygen chemical potential. We find that split vacancies are the ground-state vacancy for all studied polymorphs ($β$, $α$, and $κ$). Split vacancies are more stable than simple vacancies by ~0.75 eV ($β$), ~0.41 eV ($α$), and ~0.14 eV ($κ$). Notably, MLIPs correctly identified the specific split-vacancy ground states and yielded an energetic ordering of symmetry-inequivalent defect configurations in excellent agreement with HSE06 results. While Hf and Si show low formation energy and act as shallow donors, especially under oxygen-poor conditions, their efficiency is limited by split-vacancy compensation. The growth under oxygen-poor conditions is a universal requirement to suppress these defects and achieve high n-type conductivity across the $Ga_2O_3$ polymorph. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_28743 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Universal Stability of Ga Split Vacancies across α-, β-, and κ-Ga2O3 Polymorphs: A Machine-Learning Accelerated Study Fadla, Mohamed Abdelilah Grüning, Myrta Stella, Lorenzo Materials Science Split Ga vacancies are the dominant native acceptor in $β$-$Ga_2O_3$; however, their role in $α$ and $κ$ phases has been largely overlooked or assumed to be unfavorable. A detailed understanding of these defects is critical for tailoring the electrical conductivity and optical properties and optimising $Ga_2O_3$-based devices. In this work, we used machine learning interatomic potentials (MLIPs) to accelerate the discovery of non-local defect reconstructions, followed by HSE06 hybrid DFT to accurately quantify defect properties of single vacancy $V_{\text{Ga}}$, split vacancy $V_{\text{Ga}}^{\text{i}}$ and substitutional donors ($\mathrm{Hf_{Ga}}$ and $\mathrm{Si_{Ga}}$) across a wide range of experimentally relevant conditions for the oxygen chemical potential. We find that split vacancies are the ground-state vacancy for all studied polymorphs ($β$, $α$, and $κ$). Split vacancies are more stable than simple vacancies by ~0.75 eV ($β$), ~0.41 eV ($α$), and ~0.14 eV ($κ$). Notably, MLIPs correctly identified the specific split-vacancy ground states and yielded an energetic ordering of symmetry-inequivalent defect configurations in excellent agreement with HSE06 results. While Hf and Si show low formation energy and act as shallow donors, especially under oxygen-poor conditions, their efficiency is limited by split-vacancy compensation. The growth under oxygen-poor conditions is a universal requirement to suppress these defects and achieve high n-type conductivity across the $Ga_2O_3$ polymorph. |
| title | Universal Stability of Ga Split Vacancies across α-, β-, and κ-Ga2O3 Polymorphs: A Machine-Learning Accelerated Study |
| topic | Materials Science |
| url | https://arxiv.org/abs/2605.28743 |