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Hauptverfasser: Zheng, Xiujun, Bisschop, Suzanne, Moerman, Arno, Niels, Margot, Vissers, Ewoud, Papadopoulou, Athina, Ekkels, Philip, Nenezic, Patrick, Atzeni, Simone, Ozceri, Elif, McCaughery, Tiernan, Uzun, Ali, Chen, Ye, Bogaert, Laurens, Singh, Nishant, Saseendran, Sandeep Seema, Janssen, Sofie, Rajasekaran, Natarajan, Balakrishnan, Sadhishkumar, Absil, Philippe, Roelkens, Gunther, Kuyken, Bart, Uvin, Sarah, Billet, Maximilien
Format: Preprint
Veröffentlicht: 2026
Schlagworte:
Online-Zugang:https://arxiv.org/abs/2605.28971
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author Zheng, Xiujun
Bisschop, Suzanne
Moerman, Arno
Niels, Margot
Vissers, Ewoud
Papadopoulou, Athina
Ekkels, Philip
Nenezic, Patrick
Atzeni, Simone
Ozceri, Elif
McCaughery, Tiernan
Uzun, Ali
Chen, Ye
Bogaert, Laurens
Singh, Nishant
Saseendran, Sandeep Seema
Janssen, Sofie
Rajasekaran, Natarajan
Balakrishnan, Sadhishkumar
Absil, Philippe
Roelkens, Gunther
Kuyken, Bart
Uvin, Sarah
Billet, Maximilien
author_facet Zheng, Xiujun
Bisschop, Suzanne
Moerman, Arno
Niels, Margot
Vissers, Ewoud
Papadopoulou, Athina
Ekkels, Philip
Nenezic, Patrick
Atzeni, Simone
Ozceri, Elif
McCaughery, Tiernan
Uzun, Ali
Chen, Ye
Bogaert, Laurens
Singh, Nishant
Saseendran, Sandeep Seema
Janssen, Sofie
Rajasekaran, Natarajan
Balakrishnan, Sadhishkumar
Absil, Philippe
Roelkens, Gunther
Kuyken, Bart
Uvin, Sarah
Billet, Maximilien
contents The rapid growth of artificial intelligence (AI) and other data center applications is driving the demand for photonic interconnects that combine high-speed with low energy consumption, making scalability a critical requirement. Micro-transfer printing (MTP) has emerged as a promising technique for the wafer-scale heterogeneous integration of thin film lithium niobate (TFLN) onto silicon photonics (SiPho) platforms. Here, we demonstrate heterogeneous SiPho TFLN integration across four full 200 mm wafers with a 3sigma placement accuracy down to 420 nm and a printing yield of larger than 95percentage. Low insertion loss less than 2 dB over 600 phase modulators (300 amplitude modulators) is achieved. A half wave voltage of 4 V in push pull configuration, and high-speed modulation with a bandwith larger than 70 GHz is demonstrated on a subset of tested devices.
format Preprint
id arxiv_https___arxiv_org_abs_2605_28971
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Micro-Transfer Printing of Lithium Niobate on 200 mm Silicon Photonics: A High-Speed Heterogeneous Wafer-Scale Platform
Zheng, Xiujun
Bisschop, Suzanne
Moerman, Arno
Niels, Margot
Vissers, Ewoud
Papadopoulou, Athina
Ekkels, Philip
Nenezic, Patrick
Atzeni, Simone
Ozceri, Elif
McCaughery, Tiernan
Uzun, Ali
Chen, Ye
Bogaert, Laurens
Singh, Nishant
Saseendran, Sandeep Seema
Janssen, Sofie
Rajasekaran, Natarajan
Balakrishnan, Sadhishkumar
Absil, Philippe
Roelkens, Gunther
Kuyken, Bart
Uvin, Sarah
Billet, Maximilien
Optics
The rapid growth of artificial intelligence (AI) and other data center applications is driving the demand for photonic interconnects that combine high-speed with low energy consumption, making scalability a critical requirement. Micro-transfer printing (MTP) has emerged as a promising technique for the wafer-scale heterogeneous integration of thin film lithium niobate (TFLN) onto silicon photonics (SiPho) platforms. Here, we demonstrate heterogeneous SiPho TFLN integration across four full 200 mm wafers with a 3sigma placement accuracy down to 420 nm and a printing yield of larger than 95percentage. Low insertion loss less than 2 dB over 600 phase modulators (300 amplitude modulators) is achieved. A half wave voltage of 4 V in push pull configuration, and high-speed modulation with a bandwith larger than 70 GHz is demonstrated on a subset of tested devices.
title Micro-Transfer Printing of Lithium Niobate on 200 mm Silicon Photonics: A High-Speed Heterogeneous Wafer-Scale Platform
topic Optics
url https://arxiv.org/abs/2605.28971