Measurements and simulations of X-ray radiation damage effects on CNM n-type 4H-SiC MOS capacitors
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arXiv
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| Autores principales: | , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| _version_ | 1866911726559035392 |
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| author | Aouadj, Khaoula Fondacci, Alessandro Morozzi, Arianna Passeri, Daniele Croci, Tommaso Onder, Sebastian Alexander Radmanovac, Daniel Bergauer, Thomas Mattiazzo, Serena Moscatelli, Francesco |
| author_facet | Aouadj, Khaoula Fondacci, Alessandro Morozzi, Arianna Passeri, Daniele Croci, Tommaso Onder, Sebastian Alexander Radmanovac, Daniel Bergauer, Thomas Mattiazzo, Serena Moscatelli, Francesco |
| contents | Silicon carbide is a promising material for radiation-hard detectors due to its wide bandgap, low leakage current, high critical electric field, and high saturation velocity. A key obstacle for its use in high-radiation environments is the incomplete understanding of surface damage at the 4H-SiC/SiO$_2$ interface.In this work, we present a combined experimental and TCAD simulation study of X-ray radiation-induced surface damage on n-type 4H-SiC MOS capacitors fabricated at CNM (Centro Nacional de Microelectronica, Barcelona), irradiated up to 10 Mrad. High-frequency (100 kHz) and quasi-static capacitance-voltage (C--V) measurements are used to evaluate the evolution of fixed oxide charge density and interface trap density as a function of dose.A dose-dependent TCAD surface model is developed and validated against the full set of measurements. The optimized model reproduces the measured C--V characteristics across the entire irradiation range and provides a physically grounded baseline for simulations of n-type 4H-SiC-based detectors. It can be used as a starting point for predictive modeling of irradiated detectors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_29375 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Measurements and simulations of X-ray radiation damage effects on CNM n-type 4H-SiC MOS capacitors Aouadj, Khaoula Fondacci, Alessandro Morozzi, Arianna Passeri, Daniele Croci, Tommaso Onder, Sebastian Alexander Radmanovac, Daniel Bergauer, Thomas Mattiazzo, Serena Moscatelli, Francesco Instrumentation and Detectors Silicon carbide is a promising material for radiation-hard detectors due to its wide bandgap, low leakage current, high critical electric field, and high saturation velocity. A key obstacle for its use in high-radiation environments is the incomplete understanding of surface damage at the 4H-SiC/SiO$_2$ interface.In this work, we present a combined experimental and TCAD simulation study of X-ray radiation-induced surface damage on n-type 4H-SiC MOS capacitors fabricated at CNM (Centro Nacional de Microelectronica, Barcelona), irradiated up to 10 Mrad. High-frequency (100 kHz) and quasi-static capacitance-voltage (C--V) measurements are used to evaluate the evolution of fixed oxide charge density and interface trap density as a function of dose.A dose-dependent TCAD surface model is developed and validated against the full set of measurements. The optimized model reproduces the measured C--V characteristics across the entire irradiation range and provides a physically grounded baseline for simulations of n-type 4H-SiC-based detectors. It can be used as a starting point for predictive modeling of irradiated detectors. |
| title | Measurements and simulations of X-ray radiation damage effects on CNM n-type 4H-SiC MOS capacitors |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2605.29375 |