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Main Authors: Guo, Xiaoyu, Ye, Junzhi, Alvarez, Cibrán Lopez, Liedke, Maciej Oskar, Butterling, Maik, Alanazi, Mutibah, Huang, Yi-Teng, Wu, Jiajie, Zhang, Zhilong, Van Turnhout, Lars, Boeije, Yorrick, Xue, Bofeng, Wang, Qingyu, Lohan, Hugh, Kavanagh, Seán R., Wagner, Andreas, Hirschmann, Eric, Taylor, Robert A., Rao, Akshay, Saucedo, Edgardo, Cazorla, Claudio, Hoye, Robert L. Z.
Format: Preprint
Published: 2026
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Online Access:https://arxiv.org/abs/2605.29925
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_version_ 1866916061299867648
author Guo, Xiaoyu
Ye, Junzhi
Alvarez, Cibrán Lopez
Liedke, Maciej Oskar
Butterling, Maik
Alanazi, Mutibah
Huang, Yi-Teng
Wu, Jiajie
Zhang, Zhilong
Van Turnhout, Lars
Boeije, Yorrick
Xue, Bofeng
Wang, Qingyu
Lohan, Hugh
Kavanagh, Seán R.
Wagner, Andreas
Hirschmann, Eric
Taylor, Robert A.
Rao, Akshay
Saucedo, Edgardo
Cazorla, Claudio
Hoye, Robert L. Z.
author_facet Guo, Xiaoyu
Ye, Junzhi
Alvarez, Cibrán Lopez
Liedke, Maciej Oskar
Butterling, Maik
Alanazi, Mutibah
Huang, Yi-Teng
Wu, Jiajie
Zhang, Zhilong
Van Turnhout, Lars
Boeije, Yorrick
Xue, Bofeng
Wang, Qingyu
Lohan, Hugh
Kavanagh, Seán R.
Wagner, Andreas
Hirschmann, Eric
Taylor, Robert A.
Rao, Akshay
Saucedo, Edgardo
Cazorla, Claudio
Hoye, Robert L. Z.
contents Pnictogen-based solar absorbers have gained prominence as promising nontoxic and stable alternatives to lead-halide perovskites (LHPs), but are severely limited by carrier localization, preventing their performance from approaching those of LHPs. Recent efforts have uncovered routes to overcome carrier localization, but these early efforts only considered intrinsic factors. Herein, we push beyond these limited early efforts, examining the role of defects, not only on cold carriers but also hot carriers. Focusing on the structurally one-dimensional pnictogen chalcohalide BiSBr, we find that whilst this material intrinsically does not exhibit carrier localization, vacancies introduced during synthesis or post-treatment lead to pronounced extrinsic self-trapping via the formation of defect-bound hot polarons-excited charge-carriers strongly coupled to local defect-induced vibrational modes. These above-gap defect states divert hot carriers from cooling to the band edge, thus depleting the mobile carrier population. Our findings establish the key role of defect-bound hot polarons in mediating extrinsic localization and offer new mechanistic insights into the interplay between defects, lattice coupling, and excited-state charge-carrier transport, which are critical to designing efficient perovskite-inspired solar absorbers.
format Preprint
id arxiv_https___arxiv_org_abs_2605_29925
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Carrier Localization in Pnictogen-Based Chalcohalides from Defect-Bound Hot Polarons
Guo, Xiaoyu
Ye, Junzhi
Alvarez, Cibrán Lopez
Liedke, Maciej Oskar
Butterling, Maik
Alanazi, Mutibah
Huang, Yi-Teng
Wu, Jiajie
Zhang, Zhilong
Van Turnhout, Lars
Boeije, Yorrick
Xue, Bofeng
Wang, Qingyu
Lohan, Hugh
Kavanagh, Seán R.
Wagner, Andreas
Hirschmann, Eric
Taylor, Robert A.
Rao, Akshay
Saucedo, Edgardo
Cazorla, Claudio
Hoye, Robert L. Z.
Materials Science
Pnictogen-based solar absorbers have gained prominence as promising nontoxic and stable alternatives to lead-halide perovskites (LHPs), but are severely limited by carrier localization, preventing their performance from approaching those of LHPs. Recent efforts have uncovered routes to overcome carrier localization, but these early efforts only considered intrinsic factors. Herein, we push beyond these limited early efforts, examining the role of defects, not only on cold carriers but also hot carriers. Focusing on the structurally one-dimensional pnictogen chalcohalide BiSBr, we find that whilst this material intrinsically does not exhibit carrier localization, vacancies introduced during synthesis or post-treatment lead to pronounced extrinsic self-trapping via the formation of defect-bound hot polarons-excited charge-carriers strongly coupled to local defect-induced vibrational modes. These above-gap defect states divert hot carriers from cooling to the band edge, thus depleting the mobile carrier population. Our findings establish the key role of defect-bound hot polarons in mediating extrinsic localization and offer new mechanistic insights into the interplay between defects, lattice coupling, and excited-state charge-carrier transport, which are critical to designing efficient perovskite-inspired solar absorbers.
title Carrier Localization in Pnictogen-Based Chalcohalides from Defect-Bound Hot Polarons
topic Materials Science
url https://arxiv.org/abs/2605.29925