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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2605.31206 |
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| _version_ | 1866917547792662528 |
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| author | Sha, Xuanzhe Liao, Shun Li, Xiaoxi Li, Chengyuan Liu, Jianli Pan, Yu Wang, Wenhai Ye, Yu Zhao, Chengxin Li, Liyi Wang, Hanwen Han, Zheng Vitto Lu, Jianming |
| author_facet | Sha, Xuanzhe Liao, Shun Li, Xiaoxi Li, Chengyuan Liu, Jianli Pan, Yu Wang, Wenhai Ye, Yu Zhao, Chengxin Li, Liyi Wang, Hanwen Han, Zheng Vitto Lu, Jianming |
| contents | Radiation-hardened electronics using semiconductors beyond silicon are essential for computation and control in extreme environments. Yet complex digital circuits based on such material platforms operating in situ under heavy-ion irradiation remain largely unexplored. Here, we show a timing circuit based on amorphous thin-film semiconductors at the 100-transistor scale, and demonstrate its robust operation through a functional "Hello World" ASCII output sequence. Beyond static device characterization, we evaluate the circuit under powered heavy-ion irradiation using tantalum ions, providing an operationally relevant assessment of radiation tolerance at the system level. Under a high particle flux of 2.5 x 10^3 ions cm^-2 s^-1, the circuit maintains stable operation during the irradiation test, achieving a total fluence of 1 x 10^6 ions cm^-2, establishing a milestone of prolonged powered digital operation under extreme conditions. Our work expands the design space of radiation-tolerant electronics, highlighting amorphous semiconductors as a promising foundation for digital circuits deployed in harsh environments. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_31206 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | In-situ operation of amorphous circuits under heavy-ion irradiation Sha, Xuanzhe Liao, Shun Li, Xiaoxi Li, Chengyuan Liu, Jianli Pan, Yu Wang, Wenhai Ye, Yu Zhao, Chengxin Li, Liyi Wang, Hanwen Han, Zheng Vitto Lu, Jianming Materials Science Other Condensed Matter Radiation-hardened electronics using semiconductors beyond silicon are essential for computation and control in extreme environments. Yet complex digital circuits based on such material platforms operating in situ under heavy-ion irradiation remain largely unexplored. Here, we show a timing circuit based on amorphous thin-film semiconductors at the 100-transistor scale, and demonstrate its robust operation through a functional "Hello World" ASCII output sequence. Beyond static device characterization, we evaluate the circuit under powered heavy-ion irradiation using tantalum ions, providing an operationally relevant assessment of radiation tolerance at the system level. Under a high particle flux of 2.5 x 10^3 ions cm^-2 s^-1, the circuit maintains stable operation during the irradiation test, achieving a total fluence of 1 x 10^6 ions cm^-2, establishing a milestone of prolonged powered digital operation under extreme conditions. Our work expands the design space of radiation-tolerant electronics, highlighting amorphous semiconductors as a promising foundation for digital circuits deployed in harsh environments. |
| title | In-situ operation of amorphous circuits under heavy-ion irradiation |
| topic | Materials Science Other Condensed Matter |
| url | https://arxiv.org/abs/2605.31206 |