Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe2 Bilayers
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arXiv
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| Autori principali: | , , , , , , , , , , , |
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| Natura: | Preprint |
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2026
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| _version_ | 1866914620399157248 |
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| author | Paul, Sourav Ghosh, Prasenjit Maity, Krishna Prasad Pandey, Vineet B., Abhijith M. Chatterjee, Premananda Watanabe, Kenji Taniguchi, Takashi Glavin, Nicholas R. Roy, Ajit K. Pal, Atindra Nath Kochat, Vidya |
| author_facet | Paul, Sourav Ghosh, Prasenjit Maity, Krishna Prasad Pandey, Vineet B., Abhijith M. Chatterjee, Premananda Watanabe, Kenji Taniguchi, Takashi Glavin, Nicholas R. Roy, Ajit K. Pal, Atindra Nath Kochat, Vidya |
| contents | Sliding ferroelectricity in van der Waals (vdW) layered systems has emerged as a promising route toward non-volatile nanoscale devices, where interlayer displacement in non-centrosymmetric bilayers generates an out-of-plane polarization. In particular, 3R-stacked bilayer transition metal dichalcogenides (TMDs) grown via chemical vapor deposition (CVD) have been shown to host such polarization due to broken inversion symmetry. However, a detailed investigation of the 2D ferroelectric (FE) properties of CVD-grown 2D films, particularly the role of intrinsic disorder, such as structural defects and domain structure, remains poorly understood. Here, we investigate the FE switching characteristics of CVD-grown 3R-stacked WSe2 using a graphene-based ferroelectric field-effect transistor (graphene-FE-FET) architecture, where graphene serves as a highly sensitive probe of induced charge modulation due to polarization switching of FEs. We show that the growth-induced structural disorder significantly impacts polarization switching, while multi-domain kinetics governs the evolution of the FE response. These findings provide important insights into the design and optimization of FE devices based on vdW materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2606_00665 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe2 Bilayers Paul, Sourav Ghosh, Prasenjit Maity, Krishna Prasad Pandey, Vineet B., Abhijith M. Chatterjee, Premananda Watanabe, Kenji Taniguchi, Takashi Glavin, Nicholas R. Roy, Ajit K. Pal, Atindra Nath Kochat, Vidya Materials Science Mesoscale and Nanoscale Physics Applied Physics Sliding ferroelectricity in van der Waals (vdW) layered systems has emerged as a promising route toward non-volatile nanoscale devices, where interlayer displacement in non-centrosymmetric bilayers generates an out-of-plane polarization. In particular, 3R-stacked bilayer transition metal dichalcogenides (TMDs) grown via chemical vapor deposition (CVD) have been shown to host such polarization due to broken inversion symmetry. However, a detailed investigation of the 2D ferroelectric (FE) properties of CVD-grown 2D films, particularly the role of intrinsic disorder, such as structural defects and domain structure, remains poorly understood. Here, we investigate the FE switching characteristics of CVD-grown 3R-stacked WSe2 using a graphene-based ferroelectric field-effect transistor (graphene-FE-FET) architecture, where graphene serves as a highly sensitive probe of induced charge modulation due to polarization switching of FEs. We show that the growth-induced structural disorder significantly impacts polarization switching, while multi-domain kinetics governs the evolution of the FE response. These findings provide important insights into the design and optimization of FE devices based on vdW materials. |
| title | Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe2 Bilayers |
| topic | Materials Science Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2606.00665 |