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| Auteurs principaux: | , , |
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| Format: | Preprint |
| Publié: |
2026
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| Accès en ligne: | https://arxiv.org/abs/2606.01265 |
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| _version_ | 1866911738370195456 |
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| author | Sadeghi, Ayoub Popryho, Leonid Partin-Vaisband, Inna |
| author_facet | Sadeghi, Ayoub Popryho, Leonid Partin-Vaisband, Inna |
| contents | This paper demonstrates the effectiveness of machine learning-driven optimization for designing application-specific GaN tri-gate FinFETs in vertical power delivery systems. Conventional TCAD-based approaches are computationally intensive and insufficient for navigating the high-dimensional, nonlinear design space of advanced GaN devices. To address this, a physics-informed active learning framework is used to intelligently guide simulations, accelerating convergence while preserving accuracy. This ML-guided approach enables the discovery of optimal configurations by efficiently exploring key structural parameters -- most notably the GaN-to-AlGaN thickness ratio -- a long-standing focus of debate in device design. By systematically exploring key structural parameters, two optimized devices with aggressively scaled gate-to-drain lengths are identified. Single-fin, multi-channel simulations show that device~D2, with a thinner GaN channel relative to the AlGaN barrier, achieves higher drive current. However, in a 300-fin configuration, device~D1 outperforms device~D2 by delivering 3.3\,A at 0.49~ohm on-resistance -- approximately 2$\times$ better -- despite slightly higher parasitics. Both devices operate in a normally-off mode. Based on an application-specific figure of merit, device~D1 achieves 5\,pC$\cdot$ohm, demonstrating 2$\times$ greater switching efficiency than device~D2, while both designs outperform industrial benchmarks from different performance standpoints. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2606_01265 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | PALTO: Physics-Informed Active Learning for Tri-Gate FinFET Design Optimization for Vertical Power Delivery Sadeghi, Ayoub Popryho, Leonid Partin-Vaisband, Inna Machine Learning Artificial Intelligence This paper demonstrates the effectiveness of machine learning-driven optimization for designing application-specific GaN tri-gate FinFETs in vertical power delivery systems. Conventional TCAD-based approaches are computationally intensive and insufficient for navigating the high-dimensional, nonlinear design space of advanced GaN devices. To address this, a physics-informed active learning framework is used to intelligently guide simulations, accelerating convergence while preserving accuracy. This ML-guided approach enables the discovery of optimal configurations by efficiently exploring key structural parameters -- most notably the GaN-to-AlGaN thickness ratio -- a long-standing focus of debate in device design. By systematically exploring key structural parameters, two optimized devices with aggressively scaled gate-to-drain lengths are identified. Single-fin, multi-channel simulations show that device~D2, with a thinner GaN channel relative to the AlGaN barrier, achieves higher drive current. However, in a 300-fin configuration, device~D1 outperforms device~D2 by delivering 3.3\,A at 0.49~ohm on-resistance -- approximately 2$\times$ better -- despite slightly higher parasitics. Both devices operate in a normally-off mode. Based on an application-specific figure of merit, device~D1 achieves 5\,pC$\cdot$ohm, demonstrating 2$\times$ greater switching efficiency than device~D2, while both designs outperform industrial benchmarks from different performance standpoints. |
| title | PALTO: Physics-Informed Active Learning for Tri-Gate FinFET Design Optimization for Vertical Power Delivery |
| topic | Machine Learning Artificial Intelligence |
| url | https://arxiv.org/abs/2606.01265 |