Magneto-optical characterization of GeSn and GeSn/SiGeSn heterostructures
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arXiv
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866916072125366272 |
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| author | Ashrafganjoie, Mehdi Dsouza, Kelvin Bhatnagar, Prithu Hossain, Khalid Dhoubhadel, Mangal Webster, Preston Assali, Simone Daoust, Patrick Moutanabbir, Oussama Yu, Shui-Qing Vashaee, Daryoosh Farfurnik, Demitry |
| author_facet | Ashrafganjoie, Mehdi Dsouza, Kelvin Bhatnagar, Prithu Hossain, Khalid Dhoubhadel, Mangal Webster, Preston Assali, Simone Daoust, Patrick Moutanabbir, Oussama Yu, Shui-Qing Vashaee, Daryoosh Farfurnik, Demitry |
| contents | Hole spin qubits in germanium (Ge)-based heterostructures have demonstrated their potential for scalable quantum information processing using all-electrical gate operations. Furthermore, the emerging material platform of germanium-tin (GeSn) can feature a direct bandgap, which makes it promising for establishing spin-photon interfaces for quantum networking. Here, we perform magneto-photoluminescence measurements of a Ge0.88Sn0.12/Si0.02Ge0.89Sn0.09 double quantum well using the double modulation Fourier transform infrared-based photoluminescence spectroscopy. Our measurements reveal theoretically expected diamagnetic shift at low magnetic fields as well as the linear trend of zeroth-level Landau quantization at higher fields and Zeeman-induced polarization-dependent energy shifts at +/- 12 T. We extract an effective g-factor of ~ 2 and an excitonic reduced mass of ~ 0.04 me consistent with previous estimations for heavy-hole Γ-valley excitons. The observation of sizable Zeeman splitting is consistent with strong spin-orbit interaction in Ge-based hole systems, which can enable electrically driven spin control. Our analysis can be adopted for studying and evaluating group-IV semiconductor heterostructures as hosts for hole spin qubits toward scalable quantum information processing. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2606_01524 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Magneto-optical characterization of GeSn and GeSn/SiGeSn heterostructures Ashrafganjoie, Mehdi Dsouza, Kelvin Bhatnagar, Prithu Hossain, Khalid Dhoubhadel, Mangal Webster, Preston Assali, Simone Daoust, Patrick Moutanabbir, Oussama Yu, Shui-Qing Vashaee, Daryoosh Farfurnik, Demitry Quantum Physics Other Condensed Matter Hole spin qubits in germanium (Ge)-based heterostructures have demonstrated their potential for scalable quantum information processing using all-electrical gate operations. Furthermore, the emerging material platform of germanium-tin (GeSn) can feature a direct bandgap, which makes it promising for establishing spin-photon interfaces for quantum networking. Here, we perform magneto-photoluminescence measurements of a Ge0.88Sn0.12/Si0.02Ge0.89Sn0.09 double quantum well using the double modulation Fourier transform infrared-based photoluminescence spectroscopy. Our measurements reveal theoretically expected diamagnetic shift at low magnetic fields as well as the linear trend of zeroth-level Landau quantization at higher fields and Zeeman-induced polarization-dependent energy shifts at +/- 12 T. We extract an effective g-factor of ~ 2 and an excitonic reduced mass of ~ 0.04 me consistent with previous estimations for heavy-hole Γ-valley excitons. The observation of sizable Zeeman splitting is consistent with strong spin-orbit interaction in Ge-based hole systems, which can enable electrically driven spin control. Our analysis can be adopted for studying and evaluating group-IV semiconductor heterostructures as hosts for hole spin qubits toward scalable quantum information processing. |
| title | Magneto-optical characterization of GeSn and GeSn/SiGeSn heterostructures |
| topic | Quantum Physics Other Condensed Matter |
| url | https://arxiv.org/abs/2606.01524 |