Moire-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe2 Bilayers
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arXiv
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| Autori principali: | , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866910281607675904 |
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| author | Thapa, Memansa Thomas, Aksa J., Jayalekshmi U. Bera, Krishna Prasad Solanki, Darshit Watanabe, Kenji Taniguchi, Takashi Shukla, Ajay Kumar Das, Anindya Soni, Ajay |
| author_facet | Thapa, Memansa Thomas, Aksa J., Jayalekshmi U. Bera, Krishna Prasad Solanki, Darshit Watanabe, Kenji Taniguchi, Takashi Shukla, Ajay Kumar Das, Anindya Soni, Ajay |
| contents | We report light emission from the moire superlattice of a twisted bilayer of tungsten diselenide (WSe2/WSe2) encapsulated in insulating hexagonal boron nitride (hBN). The low-temperature photoluminescence (PL) spectroscopy reveals signatures of moire-potential induced strong interlayer excitonic emission and phonon-assisted recombination, while the twisting significantly suppresses the emission from localized defect-bound excitons. The moire potential redistributes carriers into indirect valleys, thereby enhancing recombination efficiency and stabilizing the interlayer excitons. Our findings establish that precise control of twist angle and dielectric environment provides a new route for engineering excitonic systems for exploring exciton-phonon interactions and associated quantum phenomena in transition metal dichalcogenides. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2606_02131 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Moire-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe2 Bilayers Thapa, Memansa Thomas, Aksa J., Jayalekshmi U. Bera, Krishna Prasad Solanki, Darshit Watanabe, Kenji Taniguchi, Takashi Shukla, Ajay Kumar Das, Anindya Soni, Ajay Mesoscale and Nanoscale Physics Materials Science We report light emission from the moire superlattice of a twisted bilayer of tungsten diselenide (WSe2/WSe2) encapsulated in insulating hexagonal boron nitride (hBN). The low-temperature photoluminescence (PL) spectroscopy reveals signatures of moire-potential induced strong interlayer excitonic emission and phonon-assisted recombination, while the twisting significantly suppresses the emission from localized defect-bound excitons. The moire potential redistributes carriers into indirect valleys, thereby enhancing recombination efficiency and stabilizing the interlayer excitons. Our findings establish that precise control of twist angle and dielectric environment provides a new route for engineering excitonic systems for exploring exciton-phonon interactions and associated quantum phenomena in transition metal dichalcogenides. |
| title | Moire-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe2 Bilayers |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2606.02131 |