Stacking-Engineered Switchable Altermagnetism in Topological FeSe bilayer systems

Fuente: arXiv
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Autores principales: Li, Jie, Li, Shifang, Zhang, Mengyang, Zhou, Pan, Zhong, Jianxin, Wu, Ruqian
Formato: Preprint
Publicado: 2026
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author Li, Jie
Li, Shifang
Zhang, Mengyang
Zhou, Pan
Zhong, Jianxin
Wu, Ruqian
author_facet Li, Jie
Li, Shifang
Zhang, Mengyang
Zhou, Pan
Zhong, Jianxin
Wu, Ruqian
contents Altermagnetism and topological insulators represent two of the most transformative frontiers in modern condensed matter physics, spintronics, and quantum information science. Bringing these two paradigms together opens a largely unexplored route toward fundamentally new quantum phenomena. Here, we predict a topological altermagnetic phase in bilayer tetragonal Fe-based superconductors and reveal it as a highly tunable platform for valley-polarized anomalous Hall physics. Based on first-principles calculations, we show that the characteristic spin-splitting and valley polarization can be effectively tuned via applied strain. Moreover, the resulting valley-polarized anomalous Hall conductivity can be manipulated by shifting the Fermi level. These findings reveal a powerful route for controlling altermagnetism in topological materials and identify a realistic material platform for its experimental realization and technological exploitation.
format Preprint
id arxiv_https___arxiv_org_abs_2606_02152
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Stacking-Engineered Switchable Altermagnetism in Topological FeSe bilayer systems
Li, Jie
Li, Shifang
Zhang, Mengyang
Zhou, Pan
Zhong, Jianxin
Wu, Ruqian
Materials Science
Altermagnetism and topological insulators represent two of the most transformative frontiers in modern condensed matter physics, spintronics, and quantum information science. Bringing these two paradigms together opens a largely unexplored route toward fundamentally new quantum phenomena. Here, we predict a topological altermagnetic phase in bilayer tetragonal Fe-based superconductors and reveal it as a highly tunable platform for valley-polarized anomalous Hall physics. Based on first-principles calculations, we show that the characteristic spin-splitting and valley polarization can be effectively tuned via applied strain. Moreover, the resulting valley-polarized anomalous Hall conductivity can be manipulated by shifting the Fermi level. These findings reveal a powerful route for controlling altermagnetism in topological materials and identify a realistic material platform for its experimental realization and technological exploitation.
title Stacking-Engineered Switchable Altermagnetism in Topological FeSe bilayer systems
topic Materials Science
url https://arxiv.org/abs/2606.02152