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| Autori principali: | , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2606.02297 |
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| _version_ | 1866913180038463488 |
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| author | An, Sungjin Siu, Zhuo Bin Kaladzhyan, Vardan Bardarson, Jens H. Lee, Sunghun Lee, Myoung-Jae Park, Kidong Park, Jeunghee Jalil, Mansoor B. A. Seo, Jungpil Jung, Minkyung |
| author_facet | An, Sungjin Siu, Zhuo Bin Kaladzhyan, Vardan Bardarson, Jens H. Lee, Sunghun Lee, Myoung-Jae Park, Kidong Park, Jeunghee Jalil, Mansoor B. A. Seo, Jungpil Jung, Minkyung |
| contents | We report the observation of quantized conductance in high-mobility three-dimensional Dirac semimetal Cd$_3$As$_2$ nanowire and nanoribbon p-n junctions. By employing suspended device geometries with dual local gates, we form tunable p-n junctions and realize ballistic transport across sub-micron channel lengths. In a wide nanoribbon device with a channel width of $\sim 330$ nm, conductance plateaus appear at integer multiples of $2e^2/h$ in the n-n regime under high magnetic fields. Numerical simulations suggest that these features represent unresolved spin-split subbands due to the smaller subband spacing in wider channels, and support the interpretation that the observed quantization may originate from surface-state-dominated conduction. In contrast, narrower nanoribbons and nanowires exhibit conductance steps of $1e^2/h$, demonstrating spin-resolved subbands likely due to enhanced confinement effects. From spin-resolved subband spectroscopy, we extract an effective Landé $g$-factor of $\sim 43$ for the first subband in the bulk gap, establishing these nanostructures as a prospective platform for fault-tolerant quantum electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2606_02297 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Quantized Conductance through Surface States in High Quality Three-Dimensional Dirac Semimetal Cd$_3$As$_2$ Nanowire/Nanoribbon p-n Junctions An, Sungjin Siu, Zhuo Bin Kaladzhyan, Vardan Bardarson, Jens H. Lee, Sunghun Lee, Myoung-Jae Park, Kidong Park, Jeunghee Jalil, Mansoor B. A. Seo, Jungpil Jung, Minkyung Mesoscale and Nanoscale Physics We report the observation of quantized conductance in high-mobility three-dimensional Dirac semimetal Cd$_3$As$_2$ nanowire and nanoribbon p-n junctions. By employing suspended device geometries with dual local gates, we form tunable p-n junctions and realize ballistic transport across sub-micron channel lengths. In a wide nanoribbon device with a channel width of $\sim 330$ nm, conductance plateaus appear at integer multiples of $2e^2/h$ in the n-n regime under high magnetic fields. Numerical simulations suggest that these features represent unresolved spin-split subbands due to the smaller subband spacing in wider channels, and support the interpretation that the observed quantization may originate from surface-state-dominated conduction. In contrast, narrower nanoribbons and nanowires exhibit conductance steps of $1e^2/h$, demonstrating spin-resolved subbands likely due to enhanced confinement effects. From spin-resolved subband spectroscopy, we extract an effective Landé $g$-factor of $\sim 43$ for the first subband in the bulk gap, establishing these nanostructures as a prospective platform for fault-tolerant quantum electronics. |
| title | Quantized Conductance through Surface States in High Quality Three-Dimensional Dirac Semimetal Cd$_3$As$_2$ Nanowire/Nanoribbon p-n Junctions |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2606.02297 |