Appearance of room temperature ferromagnetism in Cu-doped TiO$_{2-δ}$ films

Fuente: arXiv
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Main Authors: Duhalde, S., Vignolo, M. F., Chiliotte, C., Torres, C. E. Rodríguez, Errico, L. A., Cabrera, A. F., Rentería, M., Sánchez, F. H., Weissmann, M.
Format: Preprint
Published: 2005
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author Duhalde, S.
Vignolo, M. F.
Chiliotte, C.
Torres, C. E. Rodríguez
Errico, L. A.
Cabrera, A. F.
Rentería, M.
Sánchez, F. H.
Weissmann, M.
author_facet Duhalde, S.
Vignolo, M. F.
Chiliotte, C.
Torres, C. E. Rodríguez
Errico, L. A.
Cabrera, A. F.
Rentería, M.
Sánchez, F. H.
Weissmann, M.
contents In recent years there has been an intense search for room temperature ferromagnetism in doped dilute semiconductors, which have many potentially applications in spintronics and optoelectronics. We report here the unexpected observation of significant room temperature ferromagnetism in a semiconductor doped with nonmagnetic impurities, Cu-doped TiO$_2$ thin films grown by Pulsed Laser Deposition. The magnetic moment, calculated from the magnetization curves, resulted surprisingly large, about 1.5 $μ_B$ per Cu atom. A large magnetic moment was also obtained from ab initio calculations using the supercell method for TiO$_2$ with Cu impurities, but only if an oxygen vacancy in the nearest-neighbour shell of Cu was present. This result suggests that the role of oxygen vacancies is crucial for the appearance of ferromagnetism. The calculations also predict that Cu doping favours the formation of oxygen vacancies.
format Preprint
id arxiv_https___arxiv_org_abs_cond_mat_0505602
institution arXiv
publishDate 2005
record_format arxiv
spellingShingle Appearance of room temperature ferromagnetism in Cu-doped TiO$_{2-δ}$ films
Duhalde, S.
Vignolo, M. F.
Chiliotte, C.
Torres, C. E. Rodríguez
Errico, L. A.
Cabrera, A. F.
Rentería, M.
Sánchez, F. H.
Weissmann, M.
Materials Science
In recent years there has been an intense search for room temperature ferromagnetism in doped dilute semiconductors, which have many potentially applications in spintronics and optoelectronics. We report here the unexpected observation of significant room temperature ferromagnetism in a semiconductor doped with nonmagnetic impurities, Cu-doped TiO$_2$ thin films grown by Pulsed Laser Deposition. The magnetic moment, calculated from the magnetization curves, resulted surprisingly large, about 1.5 $μ_B$ per Cu atom. A large magnetic moment was also obtained from ab initio calculations using the supercell method for TiO$_2$ with Cu impurities, but only if an oxygen vacancy in the nearest-neighbour shell of Cu was present. This result suggests that the role of oxygen vacancies is crucial for the appearance of ferromagnetism. The calculations also predict that Cu doping favours the formation of oxygen vacancies.
title Appearance of room temperature ferromagnetism in Cu-doped TiO$_{2-δ}$ films
topic Materials Science
url https://arxiv.org/abs/cond-mat/0505602