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  • Comparative analysis of threshold voltage extraction techniques based in the MOSFET gm/ID characteristic
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Comparative analysis of threshold voltage extraction techniques based in the MOSFET gm/ID characteristic

Fuente: Redalyc
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Bibliographic Details
Main Author: Arturo Fajardo Jaimes
Format: Artículo científico
Language:en
Published: Universidad Distrital Francisco José de Caldas 2017
Subjects:
Ingeniería
Gm
MOSFET Modeling
Threshold Voltage Extraction
ID transconductance efficiency
Online Access:
Acceder al recurso 1 Acceder al recurso 2 Acceder al recurso 3 Acceder al recurso 4 Acceder al recurso 5
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Internet

https://www.redalyc.org/articulo.oa?id=257051186003
https://www.redalyc.org/journal/2570/257051186003/
https://www.redalyc.org/journal/2570/257051186003/html/
https://www.redalyc.org/journal/2570/257051186003/257051186003.epub
https://www.redalyc.org/journal/2570/257051186003/movil

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