Shallow levels characterization in epitaxial GaAs by acousto-optic reflectance
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| Format: | Artículo científico |
| Language: | en |
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Universidad de Guanajuato
2005
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| _version_ | 1876483506626887680 |
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| author | J. González-Barbosa |
| author_facet | J. González-Barbosa |
| contents | Shallow levels characterization in epitaxial GaAs by acousto-optic reflectance J. González-Barbosa G. Cerda-Villicaña Igor V. Ostrovskii J. Estudillo-Ayala M. Torres-Cisneros Gennadiy N. Burlak Svetlana V. Koshevaya R. Guzmán-Cabrera L. A. Aguilera-Cortés E. Alvarado-Méndez J. A. Andrade-Lucio R. Rojas-Laguna J. G. Aviña-Cervantes R. Castro-Sánchez O. G. Ibarra-Manzano Multidisciplinarias (Ciencias Sociales) Semiconductors Shallow levels Optical refl ectance Optical spectra of light refl ection are detected under an infl uence of ultrasonic wave (UW)on a GaAs wafer. The differential spectrum is calculated as a difference between those takenunder UW and without that infl uence on a sample. This acousto-optic differential refl ectance(AODR) spectrum contains some bands that represent the energetic levels of the shallowcenters in a sample. A physical basis of this technique is related to a perturbation of localstates by UW. Here, a method is developed for characterization of local states at the surfacesand interfaces in crystals and low-dimensional epitaxial structures based on microelectronicsmaterials. A theoretical model is presented to explain AODR spectra. Also, experimentsusing epitaxial GaAs structures doped by Te were made. Finally, theoretical and experimentalresults show that acousto-optic refl ectance is an effective tool for characterization of shallowtrapping centers in epitaxial semiconductor structures. 2005 artículo científico 0188-6266 https://www.redalyc.org/articulo.oa?id=41615204 en http://www.redalyc.org/revista.oa?id=416 Acta Universitaria application/pdf Universidad de Guanajuato Acta Universitaria (México) Num.2 Vol.15 |
| format | Artículo científico |
| id | redalyc_41615204 |
| institution | Redalyc |
| language | en |
| publishDate | 2005 |
| publisher | Universidad de Guanajuato |
| spellingShingle | Shallow levels characterization in epitaxial GaAs by acousto-optic reflectance J. González-Barbosa Multidisciplinarias (Ciencias Sociales) Semiconductors Shallow levels Optical refl ectance Shallow levels characterization in epitaxial GaAs by acousto-optic reflectance J. González-Barbosa G. Cerda-Villicaña Igor V. Ostrovskii J. Estudillo-Ayala M. Torres-Cisneros Gennadiy N. Burlak Svetlana V. Koshevaya R. Guzmán-Cabrera L. A. Aguilera-Cortés E. Alvarado-Méndez J. A. Andrade-Lucio R. Rojas-Laguna J. G. Aviña-Cervantes R. Castro-Sánchez O. G. Ibarra-Manzano Multidisciplinarias (Ciencias Sociales) Semiconductors Shallow levels Optical refl ectance Optical spectra of light refl ection are detected under an infl uence of ultrasonic wave (UW)on a GaAs wafer. The differential spectrum is calculated as a difference between those takenunder UW and without that infl uence on a sample. This acousto-optic differential refl ectance(AODR) spectrum contains some bands that represent the energetic levels of the shallowcenters in a sample. A physical basis of this technique is related to a perturbation of localstates by UW. Here, a method is developed for characterization of local states at the surfacesand interfaces in crystals and low-dimensional epitaxial structures based on microelectronicsmaterials. A theoretical model is presented to explain AODR spectra. Also, experimentsusing epitaxial GaAs structures doped by Te were made. Finally, theoretical and experimentalresults show that acousto-optic refl ectance is an effective tool for characterization of shallowtrapping centers in epitaxial semiconductor structures. 2005 artículo científico 0188-6266 https://www.redalyc.org/articulo.oa?id=41615204 en http://www.redalyc.org/revista.oa?id=416 Acta Universitaria application/pdf Universidad de Guanajuato Acta Universitaria (México) Num.2 Vol.15 |
| title | Shallow levels characterization in epitaxial GaAs by acousto-optic reflectance |
| topic | Multidisciplinarias (Ciencias Sociales) Semiconductors Shallow levels Optical refl ectance |
| url | https://www.redalyc.org/articulo.oa?id=41615204 |