Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture
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| Format: | Artículo científico |
| Langue: | en |
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Sociedade Brasileira de Física
2001
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| _version_ | 1876455348525596672 |
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| author | Carlos E. Viana |
| author_facet | Carlos E. Viana |
| contents | Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture Carlos E. Viana Ana N. R. da Silva Nilton I. Morimoto Olivier Bonnaud Física, Astronomía y Matemáticas This study analyses the influence of the argon flow on the Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon oxide thin films by using TEOS as silicon source. The argon flow increases the deposition rate, however it also can creates some defects in the deposited film. Several characterization techniques were used to analyze the deposited films. The presence of argon, in the gas phase, modifies the plasma composition, the surface roughness of silicon wafer, and the surface reaction. The optimum argon flow ranges between 65 and 80 sccm to obtain a silicon oxide thin film with high quality in terms of refractive index, smoothness, and uniformity. 2001 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46413501023 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2 Vol.31 |
| format | Artículo científico |
| id | redalyc_46413501023 |
| institution | Redalyc |
| language | en |
| publishDate | 2001 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture Carlos E. Viana Física, Astronomía y Matemáticas Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture Carlos E. Viana Ana N. R. da Silva Nilton I. Morimoto Olivier Bonnaud Física, Astronomía y Matemáticas This study analyses the influence of the argon flow on the Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon oxide thin films by using TEOS as silicon source. The argon flow increases the deposition rate, however it also can creates some defects in the deposited film. Several characterization techniques were used to analyze the deposited films. The presence of argon, in the gas phase, modifies the plasma composition, the surface roughness of silicon wafer, and the surface reaction. The optimum argon flow ranges between 65 and 80 sccm to obtain a silicon oxide thin film with high quality in terms of refractive index, smoothness, and uniformity. 2001 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46413501023 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2 Vol.31 |
| title | Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=46413501023 |