Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedade Brasileira de Física
2008
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| _version_ | 1876476838704840704 |
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| author | H. Arabshahi |
| author_facet | H. Arabshahi |
| contents | Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application H. Arabshahi M. R. Khalvati M. Rezaee Rokn-Abadi Física, Astronomía y Matemáticas Self state Steady heating Electron Mobility Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs structures have been calculated using an ensemble Monte Carlo simulation. Electronic states within the conduction band valleys at the Γ, L and X are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The simulation shows that intervalley electron transfer plays a dominant role in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. Our simulation results have also shown that the electron velocity in InAs and AlAs is less sensitive to temperature than in other III-V semiconductors like GaAs and AlGaAs. So InAs and AlAs devices are expected be more tolerant to self-heating and high ambient temperature device modeling. Our steady-state velocity-field characteristics are in fair agreement with other recent calculations. 2008 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46413552001 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3A Vol.38 |
| format | Artículo científico |
| id | redalyc_46413552001 |
| institution | Redalyc |
| language | en |
| publishDate | 2008 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application H. Arabshahi Física, Astronomía y Matemáticas Self state Steady heating Electron Mobility Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application H. Arabshahi M. R. Khalvati M. Rezaee Rokn-Abadi Física, Astronomía y Matemáticas Self state Steady heating Electron Mobility Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs structures have been calculated using an ensemble Monte Carlo simulation. Electronic states within the conduction band valleys at the Γ, L and X are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The simulation shows that intervalley electron transfer plays a dominant role in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. Our simulation results have also shown that the electron velocity in InAs and AlAs is less sensitive to temperature than in other III-V semiconductors like GaAs and AlGaAs. So InAs and AlAs devices are expected be more tolerant to self-heating and high ambient temperature device modeling. Our steady-state velocity-field characteristics are in fair agreement with other recent calculations. 2008 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46413552001 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3A Vol.38 |
| title | Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application |
| topic | Física, Astronomía y Matemáticas Self state Steady heating Electron Mobility |
| url | https://www.redalyc.org/articulo.oa?id=46413552001 |