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The double gaussian distribution of inhomogeneous barrier heights in Al/GaN/p-GaAs (MIS) schottky diodes in wide temperature range

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Bibliographic Details
Main Author:	S. Zeyrek
Format:	Artículo científico
Language:	en
Published:	Sociedade Brasileira de Física 2008
Subjects:	Física, Astronomía y Matemáticas MIS diode Dependence Temperature Nitride passivation Barrier inhomogeneities
Online Access:	Acceder al recurso
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