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Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells

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Détails bibliographiques
Auteur principal:	B. G. Enders
Format:	Artículo científico
Langue:	en
Publié:	Sociedade Brasileira de Física 2009
Sujets:	Física, Astronomía y Matemáticas Non abrupt doping quantum wells interfacial profiles carrier sheet density
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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