Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedade Brasileira de Física
2009
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| _version_ | 1876451251626967040 |
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| author | M.D. Benoy |
| author_facet | M.D. Benoy |
| contents | Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation M.D. Benoy E.M. Mohammed M. Suresh Babu P.J. Binu B. Pradeep Física, Astronomía y Matemáticas ITO ARE Thin films Tin doped indium oxide thin films were prepared on glass substrates kept at room temperature, by activated reactive evaporation (ARE). Structural, electrical and optical properties were studied for films having different thickness. The resulting films are polycrystalline and show 90 % transmission in the visible region. Hall effect measurements at room temperature for a film with a nominal thickness of 350 nm shows a relatively high carrier concentration 6.3 × 10(20) cm-3, mobility 16 cm² V-1s-1, with a low resistivity 1.01×10-3W cm. 2009 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46413564003 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.4 Vol.39 |
| format | Artículo científico |
| id | redalyc_46413564003 |
| institution | Redalyc |
| language | en |
| publishDate | 2009 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation M.D. Benoy Física, Astronomía y Matemáticas ITO ARE Thin films Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation M.D. Benoy E.M. Mohammed M. Suresh Babu P.J. Binu B. Pradeep Física, Astronomía y Matemáticas ITO ARE Thin films Tin doped indium oxide thin films were prepared on glass substrates kept at room temperature, by activated reactive evaporation (ARE). Structural, electrical and optical properties were studied for films having different thickness. The resulting films are polycrystalline and show 90 % transmission in the visible region. Hall effect measurements at room temperature for a film with a nominal thickness of 350 nm shows a relatively high carrier concentration 6.3 × 10(20) cm-3, mobility 16 cm² V-1s-1, with a low resistivity 1.01×10-3W cm. 2009 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46413564003 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.4 Vol.39 |
| title | Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation |
| topic | Física, Astronomía y Matemáticas ITO ARE Thin films |
| url | https://www.redalyc.org/articulo.oa?id=46413564003 |