Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedade Brasileira de Física
2010
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| _version_ | 1876440884384366592 |
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| author | R. Sarma |
| author_facet | R. Sarma |
| contents | Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator R. Sarma D. Saikia Puja Saikia P.K. Saikia B. Baishya Física, Astronomía y Matemáticas Pentacene Two Step Deposition Low Threshold voltage Rare earth oxide Nd2O3 Organic Thin Film Transistors We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 10(4) and mobility is 0.13cm²/V.s. Pentacene film is deposited on Nd2O3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. 2010 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46415798019 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3 Vol.40 |
| format | Artículo científico |
| id | redalyc_46415798019 |
| institution | Redalyc |
| language | en |
| publishDate | 2010 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator R. Sarma Física, Astronomía y Matemáticas Pentacene Two Step Deposition Low Threshold voltage Rare earth oxide Nd2O3 Organic Thin Film Transistors Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator R. Sarma D. Saikia Puja Saikia P.K. Saikia B. Baishya Física, Astronomía y Matemáticas Pentacene Two Step Deposition Low Threshold voltage Rare earth oxide Nd2O3 Organic Thin Film Transistors We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 10(4) and mobility is 0.13cm²/V.s. Pentacene film is deposited on Nd2O3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. 2010 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46415798019 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.3 Vol.40 |
| title | Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator |
| topic | Física, Astronomía y Matemáticas Pentacene Two Step Deposition Low Threshold voltage Rare earth oxide Nd2O3 Organic Thin Film Transistors |
| url | https://www.redalyc.org/articulo.oa?id=46415798019 |