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Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

Fuente: Redalyc

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Dettagli Bibliografici
Autore principale:	R. Sarma
Natura:	Artículo científico
Lingua:	en
Pubblicazione:	Sociedade Brasileira de Física 2010
Soggetti:	Física, Astronomía y Matemáticas Pentacene Two Step Deposition Low Threshold voltage Rare earth oxide Nd2O3 Organic Thin Film Transistors
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

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