Analysis of electron direct tunneling current through very-thin gate oxides in MOS capacitors with the parallel-perpendicular kinetic energy components and anisotropic masses
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| Format: | Artículo científico |
| Langue: | en |
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Sociedade Brasileira de Física
2010
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| _version_ | 1876475637484486656 |
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| author | Fatimah Arofiati Noor |
| author_facet | Fatimah Arofiati Noor |
| contents | Analysis of electron direct tunneling current through very-thin gate oxides in MOS capacitors with the parallel-perpendicular kinetic energy components and anisotropic masses Fatimah Arofiati Noor Mikrajuddin Abdullah Sukirno Khairurrijal Física, Astronomía y Matemáticas gate oxide gate velocity anisotropic mass tunneling current An electron direct tunneling current model of n+- poly - Si/SiO2/p - Si(100) metal-oxide-semiconductor (MOS) capacitors has been developed by considering a parallel-perpendicular kinetic energy coupling, which is represented by the gate electron phase velocity, and anisotropic masses under a parabolic E-k dispersion relationship. The electron effective mass in the oxide and the electron phase velocity in the n+ poly-Si gate are the only two fitting parameters to compare calculated tunneling currents to measured ones. It was obtained that the calculated tunneling currents fit well to the measured ones. The electron effective mass in the oxide layer tends to increase with decreasing the oxide thickness. In addition, the gate electron velocity is a constant of 1x10(5)m/s. Moreover, the theoretical model offers a simple treatment and an accurate result in obtaining the tunneling current. 2010 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46415799008 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.4 Vol.40 |
| format | Artículo científico |
| id | redalyc_46415799008 |
| institution | Redalyc |
| language | en |
| publishDate | 2010 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Analysis of electron direct tunneling current through very-thin gate oxides in MOS capacitors with the parallel-perpendicular kinetic energy components and anisotropic masses Fatimah Arofiati Noor Física, Astronomía y Matemáticas gate oxide gate velocity anisotropic mass tunneling current Analysis of electron direct tunneling current through very-thin gate oxides in MOS capacitors with the parallel-perpendicular kinetic energy components and anisotropic masses Fatimah Arofiati Noor Mikrajuddin Abdullah Sukirno Khairurrijal Física, Astronomía y Matemáticas gate oxide gate velocity anisotropic mass tunneling current An electron direct tunneling current model of n+- poly - Si/SiO2/p - Si(100) metal-oxide-semiconductor (MOS) capacitors has been developed by considering a parallel-perpendicular kinetic energy coupling, which is represented by the gate electron phase velocity, and anisotropic masses under a parabolic E-k dispersion relationship. The electron effective mass in the oxide and the electron phase velocity in the n+ poly-Si gate are the only two fitting parameters to compare calculated tunneling currents to measured ones. It was obtained that the calculated tunneling currents fit well to the measured ones. The electron effective mass in the oxide layer tends to increase with decreasing the oxide thickness. In addition, the gate electron velocity is a constant of 1x10(5)m/s. Moreover, the theoretical model offers a simple treatment and an accurate result in obtaining the tunneling current. 2010 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46415799008 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.4 Vol.40 |
| title | Analysis of electron direct tunneling current through very-thin gate oxides in MOS capacitors with the parallel-perpendicular kinetic energy components and anisotropic masses |
| topic | Física, Astronomía y Matemáticas gate oxide gate velocity anisotropic mass tunneling current |
| url | https://www.redalyc.org/articulo.oa?id=46415799008 |