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Analysis of electron direct tunneling current through very-thin gate oxides in MOS capacitors with the parallel-perpendicular kinetic energy components and anisotropic masses

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Dettagli Bibliografici
Autore principale:	Fatimah Arofiati Noor
Natura:	Artículo científico
Lingua:	en
Pubblicazione:	Sociedade Brasileira de Física 2010
Soggetti:	Física, Astronomía y Matemáticas gate oxide gate velocity anisotropic mass tunneling current
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

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