Growth of ZnO Nanostructures on Porous Silicon and Oxidized Porous Silicon Substrates

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Main Author: M. Rajabi
Format: Artículo científico
Language:en
Published: Sociedade Brasileira de Física 2011
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author M. Rajabi
author_facet M. Rajabi
contents Growth of ZnO Nanostructures on Porous Silicon and Oxidized Porous Silicon Substrates M. Rajabi R. S. Dariani A. Iraji zad Física, Astronomía y Matemáticas ZnO XRD Porous silicon Texture coefficient Chemical vapour transport and condensation We have investigated an oxidation of substrate effect on structural morphology of zinc oxide (ZnO) rods. ZnO rods are grown on porous silicon (PS) and on thermally oxidized porous silicon substrates by carbothermal reduction of ZnO powder through chemical vapour transport and condensation. Porous silicon is fabricated by electrochemical etching of silicon in hydrofluoric acid solution. The effects of substrates on morphology and structure of ZnO nanostructures have been studied. The morphology of substrates is studied by atomic force microscopy in contact mode. The texture coefficient of each sample is calculated from X-ray diffraction data that demonstrate random orientation of ZnO rods on oxidized porous silicon substrate. The morphology of structures is investigated by scanning electron microscopy that confirms the surface roughness tends to increase the growth rate of ZnO rods on oxidized PS compared with porous silicon substrate. A green emission has been observed in ZnO structures grown on oxidized PS substrates by photoluminescence measurements. 2011 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46421602003 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2-3 Vol.41
format Artículo científico
id redalyc_46421602003
institution Redalyc
language en
publishDate 2011
publisher Sociedade Brasileira de Física
spellingShingle Growth of ZnO Nanostructures on Porous Silicon and Oxidized Porous Silicon Substrates
M. Rajabi
Física, Astronomía y Matemáticas
ZnO
XRD
Porous silicon
Texture coefficient
Chemical vapour transport and condensation
Growth of ZnO Nanostructures on Porous Silicon and Oxidized Porous Silicon Substrates M. Rajabi R. S. Dariani A. Iraji zad Física, Astronomía y Matemáticas ZnO XRD Porous silicon Texture coefficient Chemical vapour transport and condensation We have investigated an oxidation of substrate effect on structural morphology of zinc oxide (ZnO) rods. ZnO rods are grown on porous silicon (PS) and on thermally oxidized porous silicon substrates by carbothermal reduction of ZnO powder through chemical vapour transport and condensation. Porous silicon is fabricated by electrochemical etching of silicon in hydrofluoric acid solution. The effects of substrates on morphology and structure of ZnO nanostructures have been studied. The morphology of substrates is studied by atomic force microscopy in contact mode. The texture coefficient of each sample is calculated from X-ray diffraction data that demonstrate random orientation of ZnO rods on oxidized porous silicon substrate. The morphology of structures is investigated by scanning electron microscopy that confirms the surface roughness tends to increase the growth rate of ZnO rods on oxidized PS compared with porous silicon substrate. A green emission has been observed in ZnO structures grown on oxidized PS substrates by photoluminescence measurements. 2011 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46421602003 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2-3 Vol.41
title Growth of ZnO Nanostructures on Porous Silicon and Oxidized Porous Silicon Substrates
topic Física, Astronomía y Matemáticas
ZnO
XRD
Porous silicon
Texture coefficient
Chemical vapour transport and condensation
url https://www.redalyc.org/articulo.oa?id=46421602003