Temperature-Dependent Current–Voltage (I–V) and Capacitance–Voltage (C–V) Characteristics of Ni/Cu/n-InP Schottky Barrier Diodes

Fuente: Redalyc

Saved in:

Bibliographic Details
Main Author:	Y. Munikrishana Reddy
Format:	Artículo científico
Language:	en
Published:	Sociedade Brasileira de Física 2013
Subjects:	Física, Astronomía y Matemáticas Ni Cu Ideality factor InP Schottky diode Gaussian distribution
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Internet