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Characterization of Zn-Doped Ga0.86In0.14As0.13Sb0.87

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Bibliographic Details
Main Author:	J. Díaz-Reyes
Format:	Artículo científico
Language:	en
Published:	Sociedade Brasileira de Física 2014
Subjects:	Física, Astronomía y Matemáticas III EDS Raman Photoluminescence GaInAsSb semiconductors
Online Access:	Acceder al recurso
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