Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes
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| Format: | Artículo científico |
| Langue: | en |
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Sociedade Brasileira de Física
2014
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| _version_ | 1876486673090478080 |
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| author | Kinnock V. Munthali |
| author_facet | Kinnock V. Munthali |
| contents | Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes Kinnock V. Munthali Chris Theron F. Danie Auret Sergio M. M. Coelho Linda Prinsloo Eric Njoroge Física, Astronomía y Matemáticas 6H SiC Graphite Ruthenium Rutheniumsilicide Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonal-silicon carbide (6HSiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500–1,000 °C. Rutherford backscattering spectroscopy analysis of the thin films showed formation of ruthenium silicide (Ru2Si3) at 800 °C, while diffusion of Ru into 6H-SiC commenced at 800 °C. Raman analysis of the thin films annealed at 1,000 °C showed clear D and G carbon peaks which was evidence of formation of graphite. At this annealing temperature, the Schottky contact was observed to convert to an ohmic contact, as evidenced by the linearity of current–voltage characteristic, thereby, rendering the diode unusable. The transformation from Schottky contact to ohmic contact is attributed to graphite formation at the interface. 2014 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46432477019 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.6 Vol.44 |
| format | Artículo científico |
| id | redalyc_46432477019 |
| institution | Redalyc |
| language | en |
| publishDate | 2014 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes Kinnock V. Munthali Física, Astronomía y Matemáticas 6H SiC Graphite Ruthenium Rutheniumsilicide Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes Kinnock V. Munthali Chris Theron F. Danie Auret Sergio M. M. Coelho Linda Prinsloo Eric Njoroge Física, Astronomía y Matemáticas 6H SiC Graphite Ruthenium Rutheniumsilicide Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonal-silicon carbide (6HSiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500–1,000 °C. Rutherford backscattering spectroscopy analysis of the thin films showed formation of ruthenium silicide (Ru2Si3) at 800 °C, while diffusion of Ru into 6H-SiC commenced at 800 °C. Raman analysis of the thin films annealed at 1,000 °C showed clear D and G carbon peaks which was evidence of formation of graphite. At this annealing temperature, the Schottky contact was observed to convert to an ohmic contact, as evidenced by the linearity of current–voltage characteristic, thereby, rendering the diode unusable. The transformation from Schottky contact to ohmic contact is attributed to graphite formation at the interface. 2014 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46432477019 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.6 Vol.44 |
| title | Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes |
| topic | Física, Astronomía y Matemáticas 6H SiC Graphite Ruthenium Rutheniumsilicide |
| url | https://www.redalyc.org/articulo.oa?id=46432477019 |