Imagen de Portada

Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs

Fuente: Redalyc

Guardado en:

Detalles Bibliográficos
Autor principal:	I. F. L. Dias
Formato:	Artículo científico
Lenguaje:	en
Publicado:	Sociedade Brasileira de Física 2004
Materias:	Física, Astronomía y Matemáticas
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Coherence of Elementary Excitations in Disordered GaAs/AlGaAs Superlattices
por: Yu. A. Pusep
Publicado: (2006)

Study of the RPA Pair-Correlation Function in GaAs-AlGaAs Parabolic Quantum WellWires
por: J. B. B. da Cunha
Publicado: (2004)

Electronic structure of delta shaped AlGaAs/GaAs quantum wells
por: M.R. Muro-Ortega
Publicado: (2007)

Photoreflectance study of the GaAs buffer layer in InAs/GaAs quantum dots
por: D.J. Sánchez - Trujillo
Publicado: (2017)

Raman scattering and electrical characterization of AlGaAs/GaAs rectangular and triangular barriers grown by MOCVD
por: J. Díaz-Reyes
Publicado: (2010)

Initial Growth of GaN and InN Over GaAs (110) Substrates
por: H. W. Alves Leite
Publicado: (2004)

Ab Initio Calculation of the (100) and (110) Surface Phonon Dispersion of GaAs and GaN
por: A. M. Santos
Publicado: (2004)

Gaussian superlattice in GaAs/GaInNAs solar cells
por: C.I. Cabrera
Publicado: (2017)

Optical and Structural Properties of GaAs/GaInP Quantum Wells Grown by Chemical Beam Epitaxy
por: M. R. Martins
Publicado: (2004)

Caracterización de capas de GaAs y GaAsMn depositadas por magnetrón sputtering
por: C.A. Pulzara-Mora
Publicado: (2016)

Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities
por: V. M. Aquino
Publicado: (2007)

Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application
por: H. Arabshahi
Publicado: (2008)

Photoluminescence study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy with in-situ / exsitu growth interruptions
por: M. López López
Publicado: (2001)

Exciton polariton emission from a resonantly excited GaAs microcavity
por: E. A. Cotta
Publicado: (2004)

Linear electro-optic reflectance modulated spectra of GaAs (001) around E1 and E1+1transitions
por: A. Lastras Martínez
Publicado: (1999)

The influence of TiB2-thinfilm thickness on metal - GaAs structural characteristics
por: Tetyana G. Kryshtab
Publicado: (1999)

Optical and structural characterization ot the heterostructure CdTe/GaAs grown by RF sputtering
por: M. Meléndez-Lira
Publicado: (1999)

Photoluminescence study of GaAs homoepitaxial structures with different in situ substrate surface cleaning processes
por: Javier Luyo-Alvarado
Publicado: (1997)

Efectos de los contactos eléctricos en dispositivos de efecto hall cuántico basados en heteroestructuras AlGaAs/GaAs
por: V. H. Méndez García
Publicado: (2004)

Hall Effect in InAs/GaAs Superlattices with Quantum Dots: Identifying the Presence of Deep Level Defects
por: A. G. de Oliveira
Publicado: (2004)

Growth and characterization of Ge1-xSnx alloys grown on Ge(001) and GaAs(001)
por: Vanesa Naar Osorio
Publicado: (2004)

A majored thermal nitridation process on GaAs (100) surfaces: optical, structural and chemical analysis
por: H. Vilchis
Publicado: (2009)

Magnetopolaron Effects on the Intradonor 1s-2p+ Transition Energies in a GaAs - AlGaAs Double Quantum Well
por: Paulo C. M. Machado
Publicado: (2006)

Estudio de la difusión de calor en sistemas de dos capas de GaAs/GaSb unidos mediante la técnica de fusión
por: R. A. Muñoz Hernández
Publicado: (1999)

Fotorreflectancia y fotoluminiscencia de películas de ZnSe crecidas por MBE sobre sustratos de GaAs con capas colchón de InxGa1-xAs y AlxGa 1-xAs
por: J. Luyo-Alvarado
Publicado: (1999)

Exciton Confinement in InGaN/GaN Cylindrical Quantum Wires
por: E. F. da Silva
Publicado: (2004)

Photoluminescence Properties of Te Doped AlGaAsSb Alloys
por: D. O. Toginho Filho
Publicado: (2005)

Correlated Electron-Hole Transitions in Bulk GaAs and GaAs-(Ga,Al)As QuantumWells: Effects of Applied Electric and In-Plane Magnetic Fields
por: C. A. Duque
Publicado: (2006)

Effect of a III-V buffer layer on the quality of ZnSe thin films grown by MBE on GaAs substrates
por: M. Meléndez Lira
Publicado: (1999)

Evidence of a surface acceptor state in undoped semi-insulating GaAs by photothermal radiometric deep level transient spectroscopy
por: Andreas Mandelis
Publicado: (1999)

Raman and Hall characterization of AlGaAs epilayers grown by MOCVD using elemental arsenic
por: J. Díaz Reyes
Publicado: (2002)

Carbon site switching in carbon doped GaAs, its dependence on carbon concentration
por: S. W. Bland
Publicado: (2003)

Effect of magnetic field and impurities in InAs/GaAs and GaN/AlN self-assembled quantum dots
por: G. Linares-García
Publicado: (2019)

Modelling of GaAsP/InGaAs/GaAs strain-balanced multiple-quantum well solar cells
por: C. I. Cabrera
Publicado: (2012)

Photoquenching Indications of a Thermally Triggered Transition Between Two Different EL2 Metastable States in GaAs
por: P. P. Fávero
Publicado: (2006)

The double gaussian distribution of inhomogeneous barrier heights in Al/GaN/p-GaAs (MIS) schottky diodes in wide temperature range
por: S. Zeyrek
Publicado: (2008)

Influences of nitridation and thermal annealing on GaN buffer layers and the property of subsequent GaN epilayers grown by MOCVD
por: Dong Sing Wuu
Publicado: (1999)

Band Structure and Bulk Modulus of GaN
por: A. Mahmood
Publicado: (1999)

Effects of In-Plane Magnetic Fields on the Electronic Cyclotron Effective Mass and Landé Factor in GaAs-(Ga,Al)As Quantum Wells
por: E. Reyes-Gómez
Publicado: (2006)

Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
por: R. R. O. Morais
Publicado: (2010)