X-ray Scattering from Self-Assembled InAs Islands
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| Formato: | Artículo científico |
| Lenguaje: | en |
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Sociedade Brasileira de Física
2004
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| _version_ | 1876435312980262912 |
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| author | M. V. B. Moreira |
| author_facet | M. V. B. Moreira |
| contents | X-ray Scattering from Self-Assembled InAs Islands M. V. B. Moreira W. N. Rodrigues A. Malachias B. R. A. Neves S. Kycia T. H. Metzger R. Paniago Magalhães Física, Astronomía y Matemáticas In this work several structural and chemical properties of self-assembled InAs islands grown on GaAs(001)are studied using surface x-ray scattering with synchrotron radiation. The technique of x-ray diffraction undergrazing incidence condition was employed to differentiate coherent and incoherent islands. We used a modelof a strained pyramidal island to interpret the x-ray results and correlate size and strain-state of these islands.The degree of GaAs interdiffusion in the islands was inferred from the variation of volume of the unit cell. ThePoissons ratio of the two materials involved establishes a limit of tetragonal distortion for this material. Anyvariation in this distortion is associated with the presence of Ga inside the islands. 2004 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46434408 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2B Vol.34 |
| format | Artículo científico |
| id | redalyc_46434408 |
| institution | Redalyc |
| language | en |
| publishDate | 2004 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | X-ray Scattering from Self-Assembled InAs Islands M. V. B. Moreira Física, Astronomía y Matemáticas X-ray Scattering from Self-Assembled InAs Islands M. V. B. Moreira W. N. Rodrigues A. Malachias B. R. A. Neves S. Kycia T. H. Metzger R. Paniago Magalhães Física, Astronomía y Matemáticas In this work several structural and chemical properties of self-assembled InAs islands grown on GaAs(001)are studied using surface x-ray scattering with synchrotron radiation. The technique of x-ray diffraction undergrazing incidence condition was employed to differentiate coherent and incoherent islands. We used a modelof a strained pyramidal island to interpret the x-ray results and correlate size and strain-state of these islands.The degree of GaAs interdiffusion in the islands was inferred from the variation of volume of the unit cell. ThePoissons ratio of the two materials involved establishes a limit of tetragonal distortion for this material. Anyvariation in this distortion is associated with the presence of Ga inside the islands. 2004 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46434408 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2B Vol.34 |
| title | X-ray Scattering from Self-Assembled InAs Islands |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=46434408 |