High-temperature Thin-catalytic Gate Devices for Combustion Emissions Control
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| Format: | Artículo científico |
| Language: | en |
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Sociedade Brasileira de Física
2004
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| author | Shabbir A. Khan |
| author_facet | Shabbir A. Khan |
| contents | High-temperature Thin-catalytic Gate Devices for Combustion Emissions Control Shabbir A. Khan Elder A. de Vasconcelos Y. Hasegawa T. Katsube Física, Astronomía y Matemáticas 4H- and 6H-SiC Schottky diodes responding down to 5 ppm of NO and NO2 gases at temperatures up to450oC were fabricated. Upon exposure to gas, the forward current of the devices changes due to variations inthe Schottky barrier height. For NO gas, the response follows a simple Langmuir adsorption model. Deviceparameters were evaluated from linear conductance/current versus conductance plots, with improved accuracy.The linearity of these plots is an indication that the devices are not being affected by interfacial oxide layers orpinning of the Fermi level. 4H-SiC devices showed slightly superior stability and sensitivity for this application. 2004 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46434409 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2B Vol.34 |
| format | Artículo científico |
| id | redalyc_46434409 |
| institution | Redalyc |
| language | en |
| publishDate | 2004 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | High-temperature Thin-catalytic Gate Devices for Combustion Emissions Control Shabbir A. Khan Física, Astronomía y Matemáticas High-temperature Thin-catalytic Gate Devices for Combustion Emissions Control Shabbir A. Khan Elder A. de Vasconcelos Y. Hasegawa T. Katsube Física, Astronomía y Matemáticas 4H- and 6H-SiC Schottky diodes responding down to 5 ppm of NO and NO2 gases at temperatures up to450oC were fabricated. Upon exposure to gas, the forward current of the devices changes due to variations inthe Schottky barrier height. For NO gas, the response follows a simple Langmuir adsorption model. Deviceparameters were evaluated from linear conductance/current versus conductance plots, with improved accuracy.The linearity of these plots is an indication that the devices are not being affected by interfacial oxide layers orpinning of the Fermi level. 4H-SiC devices showed slightly superior stability and sensitivity for this application. 2004 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46434409 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2B Vol.34 |
| title | High-temperature Thin-catalytic Gate Devices for Combustion Emissions Control |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=46434409 |