Optical and Structural Properties of GaAs/GaInP Quantum Wells Grown by Chemical Beam Epitaxy
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| Format: | Artículo científico |
| Langue: | en |
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Sociedade Brasileira de Física
2004
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| _version_ | 1876444887204757504 |
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| author | M. R. Martins |
| author_facet | M. R. Martins |
| contents | Optical and Structural Properties of GaAs/GaInP Quantum Wells Grown by Chemical Beam Epitaxy M. R. Martins J. B. B. Oliveira A. Tabata J. Bettini E. A. Meneses M. M. G. Carvalho E. Laureto Física, Astronomía y Matemáticas In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown byChemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), photoluminescenceexcitation (PLE) and transmission electron microscopy (TEM). Simulations of the quantum well potentialprofiles, using the Van De Walle-Martin model, supplemented by our experimental results, allowed us to associatethe interface properties with the growth procedures. We concluded that a thin GaP layer grown at theinterface improves its quality and also that the observed broad emission band in the PL spectrum is related toquaternary Ga1-xInxAs1-yPy. 2004 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46434421 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2B Vol.34 |
| format | Artículo científico |
| id | redalyc_46434421 |
| institution | Redalyc |
| language | en |
| publishDate | 2004 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Optical and Structural Properties of GaAs/GaInP Quantum Wells Grown by Chemical Beam Epitaxy M. R. Martins Física, Astronomía y Matemáticas Optical and Structural Properties of GaAs/GaInP Quantum Wells Grown by Chemical Beam Epitaxy M. R. Martins J. B. B. Oliveira A. Tabata J. Bettini E. A. Meneses M. M. G. Carvalho E. Laureto Física, Astronomía y Matemáticas In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown byChemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), photoluminescenceexcitation (PLE) and transmission electron microscopy (TEM). Simulations of the quantum well potentialprofiles, using the Van De Walle-Martin model, supplemented by our experimental results, allowed us to associatethe interface properties with the growth procedures. We concluded that a thin GaP layer grown at theinterface improves its quality and also that the observed broad emission band in the PL spectrum is related toquaternary Ga1-xInxAs1-yPy. 2004 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46434421 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2B Vol.34 |
| title | Optical and Structural Properties of GaAs/GaInP Quantum Wells Grown by Chemical Beam Epitaxy |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=46434421 |