Spin-Dependent Conductance in Nonmagnetic InGaAs Asymmetric Double Barrier Devices
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| Natura: | Artículo científico |
| Lingua: | en |
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Sociedade Brasileira de Física
2004
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| _version_ | 1876475202568716288 |
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| author | C. Moyses Araujo |
| author_facet | C. Moyses Araujo |
| contents | Spin-Dependent Conductance in Nonmagnetic InGaAs Asymmetric Double Barrier Devices C. Moyses Araujo A. Silva Ferreira da C. Persson R. Ahuja E. A. Silva de Andrada e Física, Astronomía y Matemáticas The spin dependence of the conductance of an asymmetric double-barrier InGaAs device is studied within themultiband k¢p and envelope function approximations. The spin-dependent transmission probability for electronsacross the structure is obtained using transfer matrices and the low bias conductance per unit area is calculatedas a function of the Fermi energy (or doping) in the contacts. The possibility to obtain spin polarized currentsin such devices is demonstrated, however, the resulting degree of polarization is rather small (a few percent) inthe specific InGaAs structures considered here. 2004 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46434425 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2B Vol.34 |
| format | Artículo científico |
| id | redalyc_46434425 |
| institution | Redalyc |
| language | en |
| publishDate | 2004 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Spin-Dependent Conductance in Nonmagnetic InGaAs Asymmetric Double Barrier Devices C. Moyses Araujo Física, Astronomía y Matemáticas Spin-Dependent Conductance in Nonmagnetic InGaAs Asymmetric Double Barrier Devices C. Moyses Araujo A. Silva Ferreira da C. Persson R. Ahuja E. A. Silva de Andrada e Física, Astronomía y Matemáticas The spin dependence of the conductance of an asymmetric double-barrier InGaAs device is studied within themultiband k¢p and envelope function approximations. The spin-dependent transmission probability for electronsacross the structure is obtained using transfer matrices and the low bias conductance per unit area is calculatedas a function of the Fermi energy (or doping) in the contacts. The possibility to obtain spin polarized currentsin such devices is demonstrated, however, the resulting degree of polarization is rather small (a few percent) inthe specific InGaAs structures considered here. 2004 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46434425 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2B Vol.34 |
| title | Spin-Dependent Conductance in Nonmagnetic InGaAs Asymmetric Double Barrier Devices |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=46434425 |