Anjos, A. d. (2004). Electrical Properties of Bi-Doped PbTe Layers Grown by Molecular Beam Epitaxy on BaF2 Substrates. Sociedade Brasileira de Física.
Cita Chicago Style (17a ed.)Anjos, A.M.P. dos. Electrical Properties of Bi-Doped PbTe Layers Grown by Molecular Beam Epitaxy on BaF2 Substrates. Sociedade Brasileira de Física, 2004.
Cita MLA (9a ed.)Anjos, A.M.P. dos. Electrical Properties of Bi-Doped PbTe Layers Grown by Molecular Beam Epitaxy on BaF2 Substrates. Sociedade Brasileira de Física, 2004.
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