MBE Growth and Characterization of Sn1-xEuxTe
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| Formato: | Artículo científico |
| Lenguaje: | en |
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Sociedade Brasileira de Física
2004
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| _version_ | 1876454762016145408 |
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| author | P. Motisuke |
| author_facet | P. Motisuke |
| contents | MBE Growth and Characterization of Sn1-xEuxTe P. Motisuke V. R. dos Anjos V. A. Chitta J. A. Coaquira G. Bauer A.Y. Ueta P.H.O. Rappl H. Closs E. Abramof N. F. Oliveira Física, Astronomía y Matemáticas Epilayers of Sn1¡xEuxTe (0 < x < 0:03) were grown by molecular beam epitaxy on freshly cleavedBaF2(111) substrates and their structural, electrical and optical properties were investigated. The thicknessesof epilayers were about 1.5 ¹m and deposition was carried out at growth temperatures of 300 oC. The structuralproperties were investigated by high resolution X-ray diffraction and a sharp film degradation could beobserved with increasing europium content. Electrical measurements with temperature varying from 300 to10K indicated that the epilayers present carrier concentration ranging between 3 £ 1020 and 6 £ 1020cm¡3and a low resistivity from 6:3 £ 10¡5 to 1:2 £ 10¡4 .cm. From optical measurements it could be seen thatspectra present a low energy edge corresponding to the beginning of intra band excitations and the high energyedge due to inter band excitations. 2004 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46434438 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2B Vol.34 |
| format | Artículo científico |
| id | redalyc_46434438 |
| institution | Redalyc |
| language | en |
| publishDate | 2004 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | MBE Growth and Characterization of Sn1-xEuxTe P. Motisuke Física, Astronomía y Matemáticas MBE Growth and Characterization of Sn1-xEuxTe P. Motisuke V. R. dos Anjos V. A. Chitta J. A. Coaquira G. Bauer A.Y. Ueta P.H.O. Rappl H. Closs E. Abramof N. F. Oliveira Física, Astronomía y Matemáticas Epilayers of Sn1¡xEuxTe (0 < x < 0:03) were grown by molecular beam epitaxy on freshly cleavedBaF2(111) substrates and their structural, electrical and optical properties were investigated. The thicknessesof epilayers were about 1.5 ¹m and deposition was carried out at growth temperatures of 300 oC. The structuralproperties were investigated by high resolution X-ray diffraction and a sharp film degradation could beobserved with increasing europium content. Electrical measurements with temperature varying from 300 to10K indicated that the epilayers present carrier concentration ranging between 3 £ 1020 and 6 £ 1020cm¡3and a low resistivity from 6:3 £ 10¡5 to 1:2 £ 10¡4 .cm. From optical measurements it could be seen thatspectra present a low energy edge corresponding to the beginning of intra band excitations and the high energyedge due to inter band excitations. 2004 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46434438 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2B Vol.34 |
| title | MBE Growth and Characterization of Sn1-xEuxTe |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=46434438 |