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| Natura: | Artículo científico |
| Lingua: | en |
| Pubblicazione: |
Sociedade Brasileira de Física
2005
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| Accesso online: | https://www.redalyc.org/articulo.oa?id=46435615 |
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Sommario:
- Photoluminescence Properties of Te Doped AlGaAsSb Alloys D. O. Toginho Filho I. F. L. Dias J. L. Duarte E. Laureto Jean C. Harmand Física, Astronomía y Matemáticas A detailed study of the photoluminescence properties in undoped and Te-doped AlGaAsSb alloys latticematched to InP is presented. Photoluminescent temperature and excitation intensity dependences are employedto discuss the origin of the dominant transition and the influence of the presence of Al and Te on the fluctuationof the electrostatic potential in the epitaxial layers. The behavior of PL dominant transitions is associated withthe quasi-donor-acceptor-pair (QDAP) model at a low temperature interval. The temperature dependence ofphotoluminescence intensities showed characteristics similar to those observed for amorphous semiconductorsand disordered superlattices. The presence of two V elements, or the presence of Sb in the ternary and quaternary(III)-III-V-V alloys, causes a reduction in photoluminescence intensity temperature dependence, when comparedto (III)-III-III-V alloys. 2005 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46435615 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.4A Vol.35