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| Format: | Artículo científico |
| Sprache: | en |
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Sociedade Brasileira de Física
2006
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| Online-Zugang: | https://www.redalyc.org/articulo.oa?id=46436304 |
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Inhaltsangabe:
- Variable Range Hopping Conduction in Low-Temperature Molecular Beam Epitaxy GaAs C. P. L Rubinger R.M. Rubinger H.A. Albuquerque R. L. da Silva A. G. de Oliveira G.M. Ribeiro W. N. Rodrigues M. V. B. Moreira Física, Astronomía y Matemáticas GaAs Variable range hopping Resistivity measurements Electric transport properties measured by Van der Pauw resistivity experiments of Low-Temperature MolecularBeam Epitaxy (LT-MBE) GaAs samples are used to identify a method to improve the resistivity of GaAsmaterial. We present results on five samples grown at 265, 310, 315, 325, and 345 oC. The electric measurementswere carried out at temperatures ranging from 130 to 300 K. In this temperature range the dominanttransport process is identified as variable range hopping. The hopping parameter plotted against the growthtemperature is shown to present a maximum. The mechanisms responsible for this behavior are discussed inrelation to the compensation ratio. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436304 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36