Non-Linear Electron Mobility in n-Doped III-Nitrides

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Auteur principal: Clóves G. Rodrigues
Format: Artículo científico
Langue:en
Publié: Sociedade Brasileira de Física 2006
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author Clóves G. Rodrigues
author_facet Clóves G. Rodrigues
contents Non-Linear Electron Mobility in n-Doped III-Nitrides Clóves G. Rodrigues Áurea R. Vasconcellos Roberto Luzzi Física, Astronomía y Matemáticas III Nitrides Mobility Nonlinear transport A theoretical study of the mobility of n-doped III-Nitrides in wurtzite phase is reported. We have determinedthe nonequilibrium thermodynamic state of the bulk n-InN, n-GaN, and n-AlN systems - driven far away fromequilibrium by a strong electric field - in the steady state, which follows after a very fast transient. For thiswe solve the set of coupled nonlinear integro-differential equations of evolution of the nonequilibrium thermodynamicvariables, for the three materials, to obtain their steady state values. The dependence of the mobility(which depends on the nonequilibrium thermodynamic state of the sample) on the electric field strength andthe concentration (of electrons and impurities) is derived, which decreases with the increase of the electric fieldstrength and the concentration of carriers, evidencing the influence of the nonlinear transport involved. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436305 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36
format Artículo científico
id redalyc_46436305
institution Redalyc
language en
publishDate 2006
publisher Sociedade Brasileira de Física
spellingShingle Non-Linear Electron Mobility in n-Doped III-Nitrides
Clóves G. Rodrigues
Física, Astronomía y Matemáticas
III
Nitrides
Mobility
Nonlinear transport
Non-Linear Electron Mobility in n-Doped III-Nitrides Clóves G. Rodrigues Áurea R. Vasconcellos Roberto Luzzi Física, Astronomía y Matemáticas III Nitrides Mobility Nonlinear transport A theoretical study of the mobility of n-doped III-Nitrides in wurtzite phase is reported. We have determinedthe nonequilibrium thermodynamic state of the bulk n-InN, n-GaN, and n-AlN systems - driven far away fromequilibrium by a strong electric field - in the steady state, which follows after a very fast transient. For thiswe solve the set of coupled nonlinear integro-differential equations of evolution of the nonequilibrium thermodynamicvariables, for the three materials, to obtain their steady state values. The dependence of the mobility(which depends on the nonequilibrium thermodynamic state of the sample) on the electric field strength andthe concentration (of electrons and impurities) is derived, which decreases with the increase of the electric fieldstrength and the concentration of carriers, evidencing the influence of the nonlinear transport involved. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436305 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36
title Non-Linear Electron Mobility in n-Doped III-Nitrides
topic Física, Astronomía y Matemáticas
III
Nitrides
Mobility
Nonlinear transport
url https://www.redalyc.org/articulo.oa?id=46436305