Low Frequency Oscillations and Bifurcation Diagram in Semi-Insulating GaAs Samples
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| Sprache: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876453115861925888 |
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| author | A.G. de Oliveira |
| author_facet | A.G. de Oliveira |
| contents | Low Frequency Oscillations and Bifurcation Diagram in Semi-Insulating GaAs Samples A.G. de Oliveira R. L. da Silva H.A. Albuquerque R.M. Rubinger G. M. Ribeiro W. N. Rodrigues Física, Astronomía y Matemáticas GaAs Bifurcation diagrams Low frequency current oscillations We present an experimental study of bifurcation diagrams from low frequency current oscillations (LFO) measurementsobtained from semi-insulating GaAs samples grown by low temperature molecular beam Epitaxy (LTMBE).The considered growth temperatures were 215 ° C and 265 ° C. LFO are considered to be spontaneouslygenerated oscillations under constant applied bias V. These oscillations were measurement and recorded in theform of time series. The bifurcation diagrams were obtained from the sequence of minima as a function of theapplied bias. The standard measurement procedure was described elsewhere. As the control parameter, the biasallows the identification of a bifurcation route to chaos. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436306 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436306 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Low Frequency Oscillations and Bifurcation Diagram in Semi-Insulating GaAs Samples A.G. de Oliveira Física, Astronomía y Matemáticas GaAs Bifurcation diagrams Low frequency current oscillations Low Frequency Oscillations and Bifurcation Diagram in Semi-Insulating GaAs Samples A.G. de Oliveira R. L. da Silva H.A. Albuquerque R.M. Rubinger G. M. Ribeiro W. N. Rodrigues Física, Astronomía y Matemáticas GaAs Bifurcation diagrams Low frequency current oscillations We present an experimental study of bifurcation diagrams from low frequency current oscillations (LFO) measurementsobtained from semi-insulating GaAs samples grown by low temperature molecular beam Epitaxy (LTMBE).The considered growth temperatures were 215 ° C and 265 ° C. LFO are considered to be spontaneouslygenerated oscillations under constant applied bias V. These oscillations were measurement and recorded in theform of time series. The bifurcation diagrams were obtained from the sequence of minima as a function of theapplied bias. The standard measurement procedure was described elsewhere. As the control parameter, the biasallows the identification of a bifurcation route to chaos. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436306 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | Low Frequency Oscillations and Bifurcation Diagram in Semi-Insulating GaAs Samples |
| topic | Física, Astronomía y Matemáticas GaAs Bifurcation diagrams Low frequency current oscillations |
| url | https://www.redalyc.org/articulo.oa?id=46436306 |