Low Frequency Oscillations and Bifurcation Diagram in Semi-Insulating GaAs Samples

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1. Verfasser: A.G. de Oliveira
Format: Artículo científico
Sprache:en
Veröffentlicht: Sociedade Brasileira de Física 2006
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author A.G. de Oliveira
author_facet A.G. de Oliveira
contents Low Frequency Oscillations and Bifurcation Diagram in Semi-Insulating GaAs Samples A.G. de Oliveira R. L. da Silva H.A. Albuquerque R.M. Rubinger G. M. Ribeiro W. N. Rodrigues Física, Astronomía y Matemáticas GaAs Bifurcation diagrams Low frequency current oscillations We present an experimental study of bifurcation diagrams from low frequency current oscillations (LFO) measurementsobtained from semi-insulating GaAs samples grown by low temperature molecular beam Epitaxy (LTMBE).The considered growth temperatures were 215 ° C and 265 ° C. LFO are considered to be spontaneouslygenerated oscillations under constant applied bias V. These oscillations were measurement and recorded in theform of time series. The bifurcation diagrams were obtained from the sequence of minima as a function of theapplied bias. The standard measurement procedure was described elsewhere. As the control parameter, the biasallows the identification of a bifurcation route to chaos. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436306 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36
format Artículo científico
id redalyc_46436306
institution Redalyc
language en
publishDate 2006
publisher Sociedade Brasileira de Física
spellingShingle Low Frequency Oscillations and Bifurcation Diagram in Semi-Insulating GaAs Samples
A.G. de Oliveira
Física, Astronomía y Matemáticas
GaAs
Bifurcation diagrams
Low frequency current oscillations
Low Frequency Oscillations and Bifurcation Diagram in Semi-Insulating GaAs Samples A.G. de Oliveira R. L. da Silva H.A. Albuquerque R.M. Rubinger G. M. Ribeiro W. N. Rodrigues Física, Astronomía y Matemáticas GaAs Bifurcation diagrams Low frequency current oscillations We present an experimental study of bifurcation diagrams from low frequency current oscillations (LFO) measurementsobtained from semi-insulating GaAs samples grown by low temperature molecular beam Epitaxy (LTMBE).The considered growth temperatures were 215 ° C and 265 ° C. LFO are considered to be spontaneouslygenerated oscillations under constant applied bias V. These oscillations were measurement and recorded in theform of time series. The bifurcation diagrams were obtained from the sequence of minima as a function of theapplied bias. The standard measurement procedure was described elsewhere. As the control parameter, the biasallows the identification of a bifurcation route to chaos. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436306 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36
title Low Frequency Oscillations and Bifurcation Diagram in Semi-Insulating GaAs Samples
topic Física, Astronomía y Matemáticas
GaAs
Bifurcation diagrams
Low frequency current oscillations
url https://www.redalyc.org/articulo.oa?id=46436306