Photoquenching Indications of a Thermally Triggered Transition Between Two Different EL2 Metastable States in GaAs
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876423820911312896 |
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| author | P. P. Fávero |
| author_facet | P. P. Fávero |
| contents | Photoquenching Indications of a Thermally Triggered Transition Between Two Different EL2 Metastable States in GaAs P. P. Fávero J. M. R. Cruz Física, Astronomía y Matemáticas EL2 GaAs Photoquenching In this work we report the observation of two different EL2 metastable states in GaAs and the effect of theoptical/thermal history of the sample on the behavior of the photoquenching kinetics. In one thermal/opticalpreparation, the photoquenching curve presented two time constants that have already been interpreted as anindication of two different metastable states. With another preparation, the initial rise in transmittance displayedonly one time constant, and we observed that a temperature increase to 83K triggered a second photoquenchingprocess. We associated this new photoquenching with a transition from the first to the second metastable state.The experimental data is explained in terms of a new proposal for the microscopic structure of the EL2 complex. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436312 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436312 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Photoquenching Indications of a Thermally Triggered Transition Between Two Different EL2 Metastable States in GaAs P. P. Fávero Física, Astronomía y Matemáticas EL2 GaAs Photoquenching Photoquenching Indications of a Thermally Triggered Transition Between Two Different EL2 Metastable States in GaAs P. P. Fávero J. M. R. Cruz Física, Astronomía y Matemáticas EL2 GaAs Photoquenching In this work we report the observation of two different EL2 metastable states in GaAs and the effect of theoptical/thermal history of the sample on the behavior of the photoquenching kinetics. In one thermal/opticalpreparation, the photoquenching curve presented two time constants that have already been interpreted as anindication of two different metastable states. With another preparation, the initial rise in transmittance displayedonly one time constant, and we observed that a temperature increase to 83K triggered a second photoquenchingprocess. We associated this new photoquenching with a transition from the first to the second metastable state.The experimental data is explained in terms of a new proposal for the microscopic structure of the EL2 complex. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436312 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | Photoquenching Indications of a Thermally Triggered Transition Between Two Different EL2 Metastable States in GaAs |
| topic | Física, Astronomía y Matemáticas EL2 GaAs Photoquenching |
| url | https://www.redalyc.org/articulo.oa?id=46436312 |