Photoquenching Indications of a Thermally Triggered Transition Between Two Different EL2 Metastable States in GaAs

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1. Verfasser: P. P. Fávero
Format: Artículo científico
Sprache:en
Veröffentlicht: Sociedade Brasileira de Física 2006
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author P. P. Fávero
author_facet P. P. Fávero
contents Photoquenching Indications of a Thermally Triggered Transition Between Two Different EL2 Metastable States in GaAs P. P. Fávero J. M. R. Cruz Física, Astronomía y Matemáticas EL2 GaAs Photoquenching In this work we report the observation of two different EL2 metastable states in GaAs and the effect of theoptical/thermal history of the sample on the behavior of the photoquenching kinetics. In one thermal/opticalpreparation, the photoquenching curve presented two time constants that have already been interpreted as anindication of two different metastable states. With another preparation, the initial rise in transmittance displayedonly one time constant, and we observed that a temperature increase to 83K triggered a second photoquenchingprocess. We associated this new photoquenching with a transition from the first to the second metastable state.The experimental data is explained in terms of a new proposal for the microscopic structure of the EL2 complex. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436312 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36
format Artículo científico
id redalyc_46436312
institution Redalyc
language en
publishDate 2006
publisher Sociedade Brasileira de Física
spellingShingle Photoquenching Indications of a Thermally Triggered Transition Between Two Different EL2 Metastable States in GaAs
P. P. Fávero
Física, Astronomía y Matemáticas
EL2
GaAs
Photoquenching
Photoquenching Indications of a Thermally Triggered Transition Between Two Different EL2 Metastable States in GaAs P. P. Fávero J. M. R. Cruz Física, Astronomía y Matemáticas EL2 GaAs Photoquenching In this work we report the observation of two different EL2 metastable states in GaAs and the effect of theoptical/thermal history of the sample on the behavior of the photoquenching kinetics. In one thermal/opticalpreparation, the photoquenching curve presented two time constants that have already been interpreted as anindication of two different metastable states. With another preparation, the initial rise in transmittance displayedonly one time constant, and we observed that a temperature increase to 83K triggered a second photoquenchingprocess. We associated this new photoquenching with a transition from the first to the second metastable state.The experimental data is explained in terms of a new proposal for the microscopic structure of the EL2 complex. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436312 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36
title Photoquenching Indications of a Thermally Triggered Transition Between Two Different EL2 Metastable States in GaAs
topic Física, Astronomía y Matemáticas
EL2
GaAs
Photoquenching
url https://www.redalyc.org/articulo.oa?id=46436312