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| Formato: | Artículo científico |
| Lenguaje: | en |
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Sociedade Brasileira de Física
2006
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| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=46436316 |
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| _version_ | 1866811745819951104 |
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| author | S. O. Ferreira |
| author_facet | S. O. Ferreira |
| contents | Volmer-Weber Growth of CdTe on Silicon: A One-Dimension Monte Carlo Model S. O. Ferreira S. C. Ferreira Física, Astronomía y Matemáticas Volmer Si(111) Weber growth Quantum dots of CdTe In the last few years intense efforts have been devoted to the growth and characterization of semiconductornanostrucutures. In particular, quantum dots of CdTe grown by hot wall epitaxy on Si(111) substrates constitutea very interesting example. CdTe/Si systems follow the Volmer-Weber growth mode with nucleation of 3DCdTe islands on the Si substrate even for less than one monolayer of evaporated material. In the present work,we proposed a simple one-dimension model to reproduce a very peculiar behavior observed in the quantum dotheight and size distributions at distinct temperatures. The model, which includes CdTe deposition, diffusion,and revaporization, qualitatively reproduces these distributions. Moreover, the width distributions suggest atransition from Stranski-Krastanow growth mode at lower temperatures to Volmer-Weber growth mode at highertemperatures. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436316 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436316 |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Volmer-Weber Growth of CdTe on Silicon: A One-Dimension Monte Carlo Model S. O. Ferreira Física, Astronomía y Matemáticas Volmer Si(111) Weber growth Quantum dots of CdTe Volmer-Weber Growth of CdTe on Silicon: A One-Dimension Monte Carlo Model S. O. Ferreira S. C. Ferreira Física, Astronomía y Matemáticas Volmer Si(111) Weber growth Quantum dots of CdTe In the last few years intense efforts have been devoted to the growth and characterization of semiconductornanostrucutures. In particular, quantum dots of CdTe grown by hot wall epitaxy on Si(111) substrates constitutea very interesting example. CdTe/Si systems follow the Volmer-Weber growth mode with nucleation of 3DCdTe islands on the Si substrate even for less than one monolayer of evaporated material. In the present work,we proposed a simple one-dimension model to reproduce a very peculiar behavior observed in the quantum dotheight and size distributions at distinct temperatures. The model, which includes CdTe deposition, diffusion,and revaporization, qualitatively reproduces these distributions. Moreover, the width distributions suggest atransition from Stranski-Krastanow growth mode at lower temperatures to Volmer-Weber growth mode at highertemperatures. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436316 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | Volmer-Weber Growth of CdTe on Silicon: A One-Dimension Monte Carlo Model |
| topic | Física, Astronomía y Matemáticas Volmer Si(111) Weber growth Quantum dots of CdTe |
| url | https://www.redalyc.org/articulo.oa?id=46436316 |