Structural and Electronic Properties of the SiC (100) Surfaces
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| Format: | Artículo científico |
| Langue: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876454475071225856 |
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| author | J. S. Soares |
| author_facet | J. S. Soares |
| contents | Structural and Electronic Properties of the SiC (100) Surfaces J. S. Soares H. W. Alves Física, Astronomía y Matemáticas SiC (100) Ab initio results Structural and electronic properties In this work, we present our preliminary ab initio results for the structural and electronic properties of bothSi- and C-terminated SiC (100) surfaces in (2£1) and c(2£2) reconstruction patterns. Based on our results, wefound that the Si-terminated surfaces are dominated by weak bonded Si-dimers, which are stabilized only atSi-rich conditions, leading to (3£2) or more complex reconstruction patterns, as verified experimentally. Also,our results show that the C-terminated surfaces is characterized by strong triply-bonded C-dimers, in a c(2£2)reconstruction pattern, which consists of C2 pairs over Si bridge sites, in agreement with experimental results. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436317 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436317 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Structural and Electronic Properties of the SiC (100) Surfaces J. S. Soares Física, Astronomía y Matemáticas SiC (100) Ab initio results Structural and electronic properties Structural and Electronic Properties of the SiC (100) Surfaces J. S. Soares H. W. Alves Física, Astronomía y Matemáticas SiC (100) Ab initio results Structural and electronic properties In this work, we present our preliminary ab initio results for the structural and electronic properties of bothSi- and C-terminated SiC (100) surfaces in (2£1) and c(2£2) reconstruction patterns. Based on our results, wefound that the Si-terminated surfaces are dominated by weak bonded Si-dimers, which are stabilized only atSi-rich conditions, leading to (3£2) or more complex reconstruction patterns, as verified experimentally. Also,our results show that the C-terminated surfaces is characterized by strong triply-bonded C-dimers, in a c(2£2)reconstruction pattern, which consists of C2 pairs over Si bridge sites, in agreement with experimental results. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436317 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | Structural and Electronic Properties of the SiC (100) Surfaces |
| topic | Física, Astronomía y Matemáticas SiC (100) Ab initio results Structural and electronic properties |
| url | https://www.redalyc.org/articulo.oa?id=46436317 |