Kinetic Monte Carlo Simulation of the Nitridation of the GaAs (100) Surfaces
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| Natura: | Artículo científico |
| Lingua: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876451003135426560 |
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| author | A. P. Castro |
| author_facet | A. P. Castro |
| contents | Kinetic Monte Carlo Simulation of the Nitridation of the GaAs (100) Surfaces A. P. Castro H. W. Leite Alves Física, Astronomía y Matemáticas Nitridation GaAs (100) (2£1) Kinetic Monte Carlo simulation We present, our preliminary results of a systematic theoretical study of the adsorption of N over As-terminatedGaAs (100) (2£1) surfaces. We analyzed the changes in the bond-lengths, bond-angles and the energeticsinvolved before and after deposition. Our results show that the N-atoms will prefer the unoccupied sites of thesurface, close to the As dimer. The presence of N pushes the As dimer out of the surface, leading to the anionexchange between N and As atoms. Based on our results, we discussed the kinetics of the N islands formationduring epitaxial growth of the III-Nitrides. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436319 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436319 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Kinetic Monte Carlo Simulation of the Nitridation of the GaAs (100) Surfaces A. P. Castro Física, Astronomía y Matemáticas Nitridation GaAs (100) (2£1) Kinetic Monte Carlo simulation Kinetic Monte Carlo Simulation of the Nitridation of the GaAs (100) Surfaces A. P. Castro H. W. Leite Alves Física, Astronomía y Matemáticas Nitridation GaAs (100) (2£1) Kinetic Monte Carlo simulation We present, our preliminary results of a systematic theoretical study of the adsorption of N over As-terminatedGaAs (100) (2£1) surfaces. We analyzed the changes in the bond-lengths, bond-angles and the energeticsinvolved before and after deposition. Our results show that the N-atoms will prefer the unoccupied sites of thesurface, close to the As dimer. The presence of N pushes the As dimer out of the surface, leading to the anionexchange between N and As atoms. Based on our results, we discussed the kinetics of the N islands formationduring epitaxial growth of the III-Nitrides. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436319 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | Kinetic Monte Carlo Simulation of the Nitridation of the GaAs (100) Surfaces |
| topic | Física, Astronomía y Matemáticas Nitridation GaAs (100) (2£1) Kinetic Monte Carlo simulation |
| url | https://www.redalyc.org/articulo.oa?id=46436319 |