Characterization of SnTe Films Grown by Molecular Beam Epitaxy
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| Formato: | Artículo científico |
| Lenguaje: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876433710669103104 |
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| author | U. A. Mengui |
| author_facet | U. A. Mengui |
| contents | Characterization of SnTe Films Grown by Molecular Beam Epitaxy U. A. Mengui E. Abramof P. H. O. Rappl A.Y. Ueta Física, Astronomía y Matemáticas SnTe BaF2 substrates Molecular beam epitaxy A series of SnTe layers with thicknesses varying from 0.42 to 9.1 µm were grown by molecular beam epitaxyon (111) BaF2 substrates. The SnTe lattice parameter was found to be 6.331 °A as determined from x-ray diffractionspectra measured in the triple-axis configuration. The FWHM of the (222) SnTe x-ray rocking curvesindicated a good crystalline quality and an unusual dependence on layer thickness. Atomic force microscopy(AFM) of the SnTe surface revealed spirals with monolayer steps formed around threading dislocations, similarto the PbTe on BaF2 epitaxy. The dislocation density was estimated from the AFM picture to be 9x108cm¡2. Small black pits corresponding to holes that were left during growth were also observed on the AFMimages. Sn diffusion can be a possible reason for these pits and the relatively high dislocation density. Electricalmeasurements showed that the SnTe epilayers present a typical p-type carrier concentration around 1020 cm¡3almost temperature independent and a Hall mobility which decreases from 104 to 103 cm2/V.s as the temperatureincreases from 10 to 350K. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436324 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436324 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Characterization of SnTe Films Grown by Molecular Beam Epitaxy U. A. Mengui Física, Astronomía y Matemáticas SnTe BaF2 substrates Molecular beam epitaxy Characterization of SnTe Films Grown by Molecular Beam Epitaxy U. A. Mengui E. Abramof P. H. O. Rappl A.Y. Ueta Física, Astronomía y Matemáticas SnTe BaF2 substrates Molecular beam epitaxy A series of SnTe layers with thicknesses varying from 0.42 to 9.1 µm were grown by molecular beam epitaxyon (111) BaF2 substrates. The SnTe lattice parameter was found to be 6.331 °A as determined from x-ray diffractionspectra measured in the triple-axis configuration. The FWHM of the (222) SnTe x-ray rocking curvesindicated a good crystalline quality and an unusual dependence on layer thickness. Atomic force microscopy(AFM) of the SnTe surface revealed spirals with monolayer steps formed around threading dislocations, similarto the PbTe on BaF2 epitaxy. The dislocation density was estimated from the AFM picture to be 9x108cm¡2. Small black pits corresponding to holes that were left during growth were also observed on the AFMimages. Sn diffusion can be a possible reason for these pits and the relatively high dislocation density. Electricalmeasurements showed that the SnTe epilayers present a typical p-type carrier concentration around 1020 cm¡3almost temperature independent and a Hall mobility which decreases from 104 to 103 cm2/V.s as the temperatureincreases from 10 to 350K. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436324 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | Characterization of SnTe Films Grown by Molecular Beam Epitaxy |
| topic | Física, Astronomía y Matemáticas SnTe BaF2 substrates Molecular beam epitaxy |
| url | https://www.redalyc.org/articulo.oa?id=46436324 |