Influence of Minority Carrier Transport in the Optical Properties of Double Barrier Diodes
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| Format: | Artículo científico |
| Language: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876463344631676928 |
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| author | I. Camps |
| author_facet | I. Camps |
| contents | Influence of Minority Carrier Transport in the Optical Properties of Double Barrier Diodes I. Camps L. F. dos Santos Y. Galvão Gobato A. Vercik Física, Astronomía y Matemáticas GaAs¡Al0:35Ga0:65As Double barrier diodes Minority carrier transport The aim of this work is to study the importance of minority carrier transport in double barrier diodes(DBD). We propose a theoretical model capable to describe the photoluminescence properties observed inGaAs¡Al0:35Ga0:65As double barrier diodes with the increase of temperature. In this model, we consideredthat the minority carries (holes) photocreated at the contact of the structure diffuse, drift and then tunnel to thewell. To study the influence of previous transport mechanisms, we solved the continuity equation under theinfluence of an applied bias and an excitation laser light. The theoretical photocurrent and photoluminescencecalculations agree quite well with the experimental observations. Within the approaches of our model, we areable to simulate the minority holes mobility from the photocurrent measurements suggesting the use of theexperimental technique as a probe of the carrier mobility. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436329 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436329 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Influence of Minority Carrier Transport in the Optical Properties of Double Barrier Diodes I. Camps Física, Astronomía y Matemáticas GaAs¡Al0:35Ga0:65As Double barrier diodes Minority carrier transport Influence of Minority Carrier Transport in the Optical Properties of Double Barrier Diodes I. Camps L. F. dos Santos Y. Galvão Gobato A. Vercik Física, Astronomía y Matemáticas GaAs¡Al0:35Ga0:65As Double barrier diodes Minority carrier transport The aim of this work is to study the importance of minority carrier transport in double barrier diodes(DBD). We propose a theoretical model capable to describe the photoluminescence properties observed inGaAs¡Al0:35Ga0:65As double barrier diodes with the increase of temperature. In this model, we consideredthat the minority carries (holes) photocreated at the contact of the structure diffuse, drift and then tunnel to thewell. To study the influence of previous transport mechanisms, we solved the continuity equation under theinfluence of an applied bias and an excitation laser light. The theoretical photocurrent and photoluminescencecalculations agree quite well with the experimental observations. Within the approaches of our model, we areable to simulate the minority holes mobility from the photocurrent measurements suggesting the use of theexperimental technique as a probe of the carrier mobility. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436329 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | Influence of Minority Carrier Transport in the Optical Properties of Double Barrier Diodes |
| topic | Física, Astronomía y Matemáticas GaAs¡Al0:35Ga0:65As Double barrier diodes Minority carrier transport |
| url | https://www.redalyc.org/articulo.oa?id=46436329 |