Energy Levels in Si and SrTiO3-Based Quantum Wells with Charge Image Effects
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| Format: | Artículo científico |
| Language: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1866558186567237632 |
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| author | M. G. Bezerra |
| author_facet | M. G. Bezerra |
| contents | Energy Levels in Si and SrTiO3-Based Quantum Wells with Charge Image Effects M. G. Bezerra T. A. S. Pereira J. A. K. Freire V. N. Freire G. A. Farias Física, Astronomía y Matemáticas Si SrTiO3 Energy Levels based quantum wells In the present work we develop a theoretical study to analyze how the image charges effects can modify theelectronic properties in Si and SrTiO3-based quantum wells. We have used the method based on the calculationof the image charge potential by solving Poisson equation in cylindrical coordinates. The numerical results showthat the electron-heavy hole recombination energy can be shifted by more than 200 meV due to the combinationof charge image and SiO2 (SrTiO3) interface thickness effects. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436330 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436330 |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Energy Levels in Si and SrTiO3-Based Quantum Wells with Charge Image Effects M. G. Bezerra Física, Astronomía y Matemáticas Si SrTiO3 Energy Levels based quantum wells Energy Levels in Si and SrTiO3-Based Quantum Wells with Charge Image Effects M. G. Bezerra T. A. S. Pereira J. A. K. Freire V. N. Freire G. A. Farias Física, Astronomía y Matemáticas Si SrTiO3 Energy Levels based quantum wells In the present work we develop a theoretical study to analyze how the image charges effects can modify theelectronic properties in Si and SrTiO3-based quantum wells. We have used the method based on the calculationof the image charge potential by solving Poisson equation in cylindrical coordinates. The numerical results showthat the electron-heavy hole recombination energy can be shifted by more than 200 meV due to the combinationof charge image and SiO2 (SrTiO3) interface thickness effects. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436330 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | Energy Levels in Si and SrTiO3-Based Quantum Wells with Charge Image Effects |
| topic | Física, Astronomía y Matemáticas Si SrTiO3 Energy Levels based quantum wells |
| url | https://www.redalyc.org/articulo.oa?id=46436330 |