Limitation of Electron Mobility in Modulation-Doped In0:53Ga0:47As/InP Quantum Wells at Low Temperatures
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876450254838038528 |
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| author | F. M. S. Lima |
| author_facet | F. M. S. Lima |
| contents | Limitation of Electron Mobility in Modulation-Doped In0:53Ga0:47As/InP Quantum Wells at Low Temperatures F. M. S. Lima A. B. Veloso A. L. A. Fonseca O. A. C. Nunes Física, Astronomía y Matemáticas Low temperature In0:53Ga0:47As Electron mobility InP Quantum Wells The low-temperature electron mobility is investigated here for electrons confined in modulation-dopedIn0:53Ga0:47As/InP single symmetric quantum wells. The subband structure calculation is developed via variationalmethod, both Schr¨odinger and Poisson equations being solved simultaneously with adequate heterointerfacematching conditions. With this in hands, the main electron scattering rates are computed, namely alloy disorder,remote ionized impurity, and interface roughness. As a result, interesting interchanges in these scatteringrates were found by varying the well width and the spacer width, which show that some scattering mechanismscan surpass the alloy disorder scattering rate and come to limit the electron mobility, a behavior not reported inthe literature 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436335 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436335 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Limitation of Electron Mobility in Modulation-Doped In0:53Ga0:47As/InP Quantum Wells at Low Temperatures F. M. S. Lima Física, Astronomía y Matemáticas Low temperature In0:53Ga0:47As Electron mobility InP Quantum Wells Limitation of Electron Mobility in Modulation-Doped In0:53Ga0:47As/InP Quantum Wells at Low Temperatures F. M. S. Lima A. B. Veloso A. L. A. Fonseca O. A. C. Nunes Física, Astronomía y Matemáticas Low temperature In0:53Ga0:47As Electron mobility InP Quantum Wells The low-temperature electron mobility is investigated here for electrons confined in modulation-dopedIn0:53Ga0:47As/InP single symmetric quantum wells. The subband structure calculation is developed via variationalmethod, both Schr¨odinger and Poisson equations being solved simultaneously with adequate heterointerfacematching conditions. With this in hands, the main electron scattering rates are computed, namely alloy disorder,remote ionized impurity, and interface roughness. As a result, interesting interchanges in these scatteringrates were found by varying the well width and the spacer width, which show that some scattering mechanismscan surpass the alloy disorder scattering rate and come to limit the electron mobility, a behavior not reported inthe literature 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436335 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | Limitation of Electron Mobility in Modulation-Doped In0:53Ga0:47As/InP Quantum Wells at Low Temperatures |
| topic | Física, Astronomía y Matemáticas Low temperature In0:53Ga0:47As Electron mobility InP Quantum Wells |
| url | https://www.redalyc.org/articulo.oa?id=46436335 |