Hydrogenated Ge Nanocrystals: Band Gap Evolution with Increasing Size
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| Natura: | Artículo científico |
| Lingua: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876425370916356096 |
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| author | P. Alfaro |
| author_facet | P. Alfaro |
| contents | Hydrogenated Ge Nanocrystals: Band Gap Evolution with Increasing Size P. Alfaro A.E. Ramos M. Cruz-Irisson A. Miranda Física, Astronomía y Matemáticas binding Empirical tight Ge quantum wires Electronic band structure The electronic band structure of various Ge quantum wires of different sizes, with hydrogenated surfaces, isstudied using a nearest-neighbor empirical tight-binding Hamiltonian by means of a sp3s* atomic orbitals basisset. We suppose that the nanostructures have the same lattice structure and the same interatomic distance as inbulk Ge and that all the dangling bonds are saturated with hydrogen atoms. These atoms are used to simulate thebonds at the surface of the wire and sweep surface states out of the fundamental gaps. One of the most importantfeatures is a clear broadening of the band gap due the quantum confinement. Comparing to experimental data,we conclude that, similar to the case of Si, the size dependent PL in the near infrared may involve a trap in thegap of the nanocrystals. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436338 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436338 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Hydrogenated Ge Nanocrystals: Band Gap Evolution with Increasing Size P. Alfaro Física, Astronomía y Matemáticas binding Empirical tight Ge quantum wires Electronic band structure Hydrogenated Ge Nanocrystals: Band Gap Evolution with Increasing Size P. Alfaro A.E. Ramos M. Cruz-Irisson A. Miranda Física, Astronomía y Matemáticas binding Empirical tight Ge quantum wires Electronic band structure The electronic band structure of various Ge quantum wires of different sizes, with hydrogenated surfaces, isstudied using a nearest-neighbor empirical tight-binding Hamiltonian by means of a sp3s* atomic orbitals basisset. We suppose that the nanostructures have the same lattice structure and the same interatomic distance as inbulk Ge and that all the dangling bonds are saturated with hydrogen atoms. These atoms are used to simulate thebonds at the surface of the wire and sweep surface states out of the fundamental gaps. One of the most importantfeatures is a clear broadening of the band gap due the quantum confinement. Comparing to experimental data,we conclude that, similar to the case of Si, the size dependent PL in the near infrared may involve a trap in thegap of the nanocrystals. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436338 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | Hydrogenated Ge Nanocrystals: Band Gap Evolution with Increasing Size |
| topic | Física, Astronomía y Matemáticas binding Empirical tight Ge quantum wires Electronic band structure |
| url | https://www.redalyc.org/articulo.oa?id=46436338 |