InGaAs Embedding of Large InAs Quantum Dots Obtained by Pulsed In Deposition for Long-Wavelength Applications
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| Formato: | Artículo científico |
| Lenguaje: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876447125528641536 |
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| author | T.E. Lamas |
| author_facet | T.E. Lamas |
| contents | InGaAs Embedding of Large InAs Quantum Dots Obtained by Pulsed In Deposition for Long-Wavelength Applications T.E. Lamas A. A. Quivy Física, Astronomía y Matemáticas Molecular beam epitaxy InAs quantum dots InGaAs quantum well In this work we studied the molecular-beam epitaxy of large InAs quantum dots embedded in an InGaAsquantum well. The formation of the quantum dots was performed by pulsed deposition of InAs material, simulatingtherefore a low deposition rate. Room-temperature photoluminescence experiments carried out on thesesamples showed intense emissions with a wavelength exceeding 1.35µm. Our preliminary data indicate thateven better results can be achieved by further manipulation of the growth conditions. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436346 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436346 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | InGaAs Embedding of Large InAs Quantum Dots Obtained by Pulsed In Deposition for Long-Wavelength Applications T.E. Lamas Física, Astronomía y Matemáticas Molecular beam epitaxy InAs quantum dots InGaAs quantum well InGaAs Embedding of Large InAs Quantum Dots Obtained by Pulsed In Deposition for Long-Wavelength Applications T.E. Lamas A. A. Quivy Física, Astronomía y Matemáticas Molecular beam epitaxy InAs quantum dots InGaAs quantum well In this work we studied the molecular-beam epitaxy of large InAs quantum dots embedded in an InGaAsquantum well. The formation of the quantum dots was performed by pulsed deposition of InAs material, simulatingtherefore a low deposition rate. Room-temperature photoluminescence experiments carried out on thesesamples showed intense emissions with a wavelength exceeding 1.35µm. Our preliminary data indicate thateven better results can be achieved by further manipulation of the growth conditions. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436346 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | InGaAs Embedding of Large InAs Quantum Dots Obtained by Pulsed In Deposition for Long-Wavelength Applications |
| topic | Física, Astronomía y Matemáticas Molecular beam epitaxy InAs quantum dots InGaAs quantum well |
| url | https://www.redalyc.org/articulo.oa?id=46436346 |