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| Format: | Artículo científico |
| Langue: | en |
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Sociedade Brasileira de Física
2006
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| Accès en ligne: | https://www.redalyc.org/articulo.oa?id=46436359 |
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| _version_ | 1866812466759991296 |
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| author | Luciana R. P. Kassab |
| author_facet | Luciana R. P. Kassab |
| contents | Semiconductor Characteristics of Nd Doped PbO-Bi2O3-Ga2O3 Films Luciana R. P. Kassab Ronaldo D. Mansano Luís da S. Zambom Vanessa D. del Cacho Física, Astronomía y Matemáticas PbO Bi2O3 Nd3+ doped Ga2O3 films Optical and semiconductor characteristics In this work optical and semiconductor characteristics of gallium oxide based thin films are studied. Thismaterial has important electro-optic applications and offers possibilities for semiconductor applications in heavymetal oxide semiconductor technology. In this study thin films of PbO-Bi2O3-Ga2O3 were deposited by reactivesputtering. Two targets with different concentrations of Nd2O3 (0.2 and 1.0 wt%) were prepared. Thin filmswere deposited by pure Ar plasma, at 5 mTorr pressure and RF power of only 20 W. Films were deposited onthree inch diameter substrates of (100) silicon wafers. Optical UV-Vis-Nir transmittance and FTIR analysesshowed that the films are transparent in the visible and middle infrared region of the electromagnetic spectrum.The refractive index of the films was of about 2.3, as measured by ellipsometry; Rutherford BackscatteringSpectroscopy (RBS) analyses were employed for the compositional analysis of the films. For the electricalcharacterization it was used metallic electrodes, and the final structure obtained is a capacitor structure where thegallium oxide film plays the role of a dielectric. In the current versus voltage (IxV) analyses, the samples with 1.0wt% of Nd2O3 show semiconductor characteristics similar to the ones obtained for the degenerated transistors.The electric characteristics of these films allow applications with electro-optic devices (phototransistors andphoto detectors). 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436359 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436359 |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Semiconductor Characteristics of Nd Doped PbO-Bi2O3-Ga2O3 Films Luciana R. P. Kassab Física, Astronomía y Matemáticas PbO Bi2O3 Nd3+ doped Ga2O3 films Optical and semiconductor characteristics Semiconductor Characteristics of Nd Doped PbO-Bi2O3-Ga2O3 Films Luciana R. P. Kassab Ronaldo D. Mansano Luís da S. Zambom Vanessa D. del Cacho Física, Astronomía y Matemáticas PbO Bi2O3 Nd3+ doped Ga2O3 films Optical and semiconductor characteristics In this work optical and semiconductor characteristics of gallium oxide based thin films are studied. Thismaterial has important electro-optic applications and offers possibilities for semiconductor applications in heavymetal oxide semiconductor technology. In this study thin films of PbO-Bi2O3-Ga2O3 were deposited by reactivesputtering. Two targets with different concentrations of Nd2O3 (0.2 and 1.0 wt%) were prepared. Thin filmswere deposited by pure Ar plasma, at 5 mTorr pressure and RF power of only 20 W. Films were deposited onthree inch diameter substrates of (100) silicon wafers. Optical UV-Vis-Nir transmittance and FTIR analysesshowed that the films are transparent in the visible and middle infrared region of the electromagnetic spectrum.The refractive index of the films was of about 2.3, as measured by ellipsometry; Rutherford BackscatteringSpectroscopy (RBS) analyses were employed for the compositional analysis of the films. For the electricalcharacterization it was used metallic electrodes, and the final structure obtained is a capacitor structure where thegallium oxide film plays the role of a dielectric. In the current versus voltage (IxV) analyses, the samples with 1.0wt% of Nd2O3 show semiconductor characteristics similar to the ones obtained for the degenerated transistors.The electric characteristics of these films allow applications with electro-optic devices (phototransistors andphoto detectors). 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436359 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | Semiconductor Characteristics of Nd Doped PbO-Bi2O3-Ga2O3 Films |
| topic | Física, Astronomía y Matemáticas PbO Bi2O3 Nd3+ doped Ga2O3 films Optical and semiconductor characteristics |
| url | https://www.redalyc.org/articulo.oa?id=46436359 |