Morphological Study of Polycrystalline SiGe Alloy Deposited by Vertical LPCVD
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| Sprache: | en |
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Sociedade Brasileira de Física
2006
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| _version_ | 1876468254611865600 |
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| author | R. C. Teixeira |
| author_facet | R. C. Teixeira |
| contents | Morphological Study of Polycrystalline SiGe Alloy Deposited by Vertical LPCVD R. C. Teixeira I. Doi J. A. Diniz J. W. Swart M. B. P. Zakia Física, Astronomía y Matemáticas Morphological study Polycrystalline SiGe alloy Low Pressure Chemical Vapor Deposition As device dimensions shrink to the deep-submicron scale, new challenges arises from the very small scaleused and even poly crystalline silicon (poly-Si) presents problems as gate electrode. The use of SiGe as gate materialcan present many advantages over the poly-Si, as it leads to a lower boron penetration and gate depletion.In this paper authors present some morphological studies of polycrystalline SiGe thin films deposited in a verticalLPCVD (Low Pressure Chemical Vapor Deposition) reactor for using as MOS (Metal Oxide Semiconductor)gate electrode. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436363 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| format | Artículo científico |
| id | redalyc_46436363 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedade Brasileira de Física |
| spellingShingle | Morphological Study of Polycrystalline SiGe Alloy Deposited by Vertical LPCVD R. C. Teixeira Física, Astronomía y Matemáticas Morphological study Polycrystalline SiGe alloy Low Pressure Chemical Vapor Deposition Morphological Study of Polycrystalline SiGe Alloy Deposited by Vertical LPCVD R. C. Teixeira I. Doi J. A. Diniz J. W. Swart M. B. P. Zakia Física, Astronomía y Matemáticas Morphological study Polycrystalline SiGe alloy Low Pressure Chemical Vapor Deposition As device dimensions shrink to the deep-submicron scale, new challenges arises from the very small scaleused and even poly crystalline silicon (poly-Si) presents problems as gate electrode. The use of SiGe as gate materialcan present many advantages over the poly-Si, as it leads to a lower boron penetration and gate depletion.In this paper authors present some morphological studies of polycrystalline SiGe thin films deposited in a verticalLPCVD (Low Pressure Chemical Vapor Deposition) reactor for using as MOS (Metal Oxide Semiconductor)gate electrode. 2006 artículo científico 0103-9733 https://www.redalyc.org/articulo.oa?id=46436363 en http://www.redalyc.org/revista.oa?id=464 Brazilian Journal of Physics application/pdf Sociedade Brasileira de Física Brazilian Journal of Physics (Brasil) Num.2A Vol.36 |
| title | Morphological Study of Polycrystalline SiGe Alloy Deposited by Vertical LPCVD |
| topic | Física, Astronomía y Matemáticas Morphological study Polycrystalline SiGe alloy Low Pressure Chemical Vapor Deposition |
| url | https://www.redalyc.org/articulo.oa?id=46436363 |